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A stochastic study of the collective effect of random distributions of dislocations

机译:错位随机分布的集体效应的随机研究

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The effect that random populations of dislocations have on a material is examined through stochastic integration of a random cloud of dislocations lying at some distance away from a material point. The problem is studied in one, two, and three dimensions. In 1D, the cloud consists of individual edge dislocations placed along the real line; in 2D, of edge dislocations and edge dipoles on the plane; in 3D, of dislocation loops, In all cases, the dislocation cloud is randomly distributed in space, associated to which several relevant physical parameters, including the material's slip geometry, the dislocation's sign, and its relative orientation, are also stochastically treated. A fully disordered population, i.e., one where the dislocation's signatures and orientations are entirely random, is first studied. It is shown that such disordered systems entail a strong indeterminacy in the collective stress fields, which here is solved by enforcing mass conservation locally. In 2D, this is achieved by modelling a cloud of edge dipoles instead of individual dislocations; in 3D, this is naturally guaranteed by the modelling of closed dislocation loops. The long-range fields of the dipoles in 2D and of the loops in 3D is modelled via their multipolar force expansions, which greatly simplifies the analytical treatment of the problem. The cloud's effect is then studied by performing the stochastic integration of the multipolar fields via Campbell's theorem. The local order, but not the magnitude of the dislocation density, is shown to be critical in contributing to the plastic relaxation of the material: fully disordered systems are shown to self-attenuate, leading to plastic neutrality; ordered and partially ordered systems, achieved when dislocation signatures are aligned, display a direct relationship between the dislocation density and the average stress shielding the material. We establish and generalise the conditions that a system of dislocations must fulfil to display Taylor's equation and the Hall-Petch relation, and offer adequate scaling laws related to this. (C) 2018 Elsevier Ltd. All rights reserved.
机译:通过随机离位于某一材料点一定距离的位错的随机云的随机积分,来检验位错的随机总体对材料的影响。从一维,二维和三个维度研究该问题。在1D中,云由沿实线放置的单个边缘错位组成;在二维中,平面上的边缘位错和边缘偶极子;在3D的位错环中,在所有情况下,位错云都是随机分布在空间中的,与之相关的几个相关物理参数(包括材料的滑移几何形状,位错的符号及其相对方向)也得到了随机处理。首先研究了完全无序的人群,即,脱位的特征和方向完全是随机的。结果表明,这种无序的系统在集体应力场中具有很强的不确定性,这可以通过在局部实施质量守恒来解决。在2D中,这是通过对边缘偶极子云(而不是单个位错)建模来实现的;在3D中,自然可以通过闭合位错环的建模来保证。通过2D偶极子和3D回路的长距离场,通过其多极力扩展进行建模,从而大大简化了对问题的分析处理。然后通过坎贝尔定理对多极场进行随机积分,研究云的影响。局部次序对位错密度的大小至关重要,但对位错密度的贡献并不重要。完全无序的系统显示出自衰减,导致塑性中性;当位错标记对齐时实现的有序和部分有序系统,显示出位错密度与屏蔽材料的平均应力之间存在直接关系。我们建立并概括了一个位错系统必须满足的条件,以显示泰勒方程和霍尔-帕奇关系,并提供与此相关的适当缩放定律。 (C)2018 Elsevier Ltd.保留所有权利。

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