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VOID GROWTH DUE TO CREEP AND GRAIN BOUNDARY DIFFUSION AT HIGH TRIAXIALITIES

机译:高三轴性引起的蠕变和晶粒边界扩散导致的空洞生长

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The growth of grain boundary voids at elevated temperatures by coupled creep and grain boundary diffusion is studied numerically using a cylindrical unit cell model. Emphasis is on the influence of the remote stress triaxiality, which is taken to cover the full range of axisymmetric stress states, from purely effective to purely hydrostatic states of stress. The motivation for extending previous results stems from the need for an accurate cavity growth model to analyse damage due to hydrogen attack, where the grain boundary voids are internally pressurized. Because of the wide range of stress states considered, numerical stability requires the use of two normalizations of the variational principle for the coupled void growth problem; one when the effective stress is dominant and the other when the mean stress is dominant. In the regime where deformation is primarily by creep, two distinct modes of deformation appear for each level of porosity; one for low triaxialities and one that takes over for sufficiently high triaxialities. Approximate models found in the literature for a dilute concentration of voids, or for finite concentrations, are explored to check their ability to represent the stress state dependence of the volumetric void growth rate. A novel approximate formula is derived fro creep dominated growth and is shown to give good agreement with numerically computed void growth rates in the high triaxiality regime and for finite concentrations. A fairly abrupt transition between creep dominated void growth and diffusion dominated void growth is found when the stress triaxiality is very high, so that the interaction between creep and diffusion is then relatively unimportant. Finally, formulae are presented which give an approximate, yet fairly accurate, expression for the void volume growth rate due to coupled diffusional and creep growth over the full range of axisymmetric stress states. [References: 29]
机译:使用圆柱晶胞模型,通过耦合蠕变和晶界扩散,研究了高温下晶界空隙的生长。重点在于远程应力三轴性的影响,该三轴性涵盖了从纯有效应力状态到纯静液压状态的所有轴对称应力状态。扩展先前结果的动机源于需要一个精确的腔体生长模型来分析由于氢侵蚀造成的破坏,在这种情况下,晶界空隙在内部受压。由于考虑了广泛的应力状态,因此数值稳定性要求对耦合的空隙生长问题采用变分原理的两个归一化;一个在有效应力占主导地位时,另一个在平均应力占主导时。在主要由蠕变引起变形的状态下,每个孔隙度水平出现两种不同的变形模式。一种用于低三轴性,一种用于足够高的三轴性。探索了在文献中找到的稀疏浓度或有限浓度的近似模型,以检查它们代表体积空洞生长速率的应力状态依赖性的能力。一个新的近似公式可以从蠕变为主的生长中得出,并显示出与在高三轴度状态和有限浓度下通过数值计算得到的空隙生长速率具有良好的一致性。当应力三轴性非常高时,在蠕变为主的空隙生长和扩散为主的空隙生长之间会出现一个相当突然的过渡,因此,蠕变与扩散之间的相互作用相对就不那么重要了。最后,给出了公式,该公式给出了由于在轴对称应力状态的整个范围内耦合的扩散和蠕变生长而导致的空隙体积增长率的近似但相当准确的表达式。 [参考:29]

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