Synthesis and Characterization of Ge_2Sb_2Te_5 Nanowires with Memory Switching Effect

摘要

Chalcogenide materials (Ge-Sb-Te alloys) are being widely used for electronic and optical data storage because of their thermally induced,reversible crystalline-to-amorphous phase transition behavior.Among many ternary Ge-Sb-Te systems of various chemical compositions,Ge_2Sb_2Te_5,in particular,is very promising for nonvolatile memory applications because of the following reasons: (a) extremely fast crystallization rates (< 100 ns),(b) high thermal stability at room temperature,and (c) fully reversible amorphous to crystalline phase transition.