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First Principles Modeling of Eosin-Loaded ZnO Films: A Step toward the Understanding of Dye-Sensitized Solar Cell Performances

机译:曙红负载的ZnO薄膜的基本原理建模:迈向染料敏化太阳能电池性能的一步

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摘要

A theoretical investigation of eosin-Y (EY) loaded ZnO thin films, the basic components of a dye-sensitized solar cell (DSSC), is presented. The EY/ZnO wurtzite (10-10) system has been fully described within a periodic approach using density functional theory (DFT) and a hybrid exchange-correlation functional. Reduced systems were also analyzed to simulate an electron transfer from the dye to the substrate. Injection times from dye to the semiconductor were calculated using the Newns-Anderson approach. Finally, the UV-visible spectra of EY/ZnO films were simulated using a time-dependent DFT approach and compared to that of the EY molecule computed in solution. The results obtained highlight that EY strongly adsorbs on the ZnO substrate contributing significantly to the electronic structure of the adsorbed system. The UV-visible spectral signature of the isolated EY molecule is still found when adsorbed on ZnO but the analysis of Γ-point crystalline orbitals reveals that a direct HOMO→LUMO excitation cannot lead to a direct electron injection into the semiconductor, the first unoccupied orbital with contributions from the ZnO substrate being the LUMO + 1. As a consequence, a two photon injection mechanism is proposed explaining the low efficiency of the EY/ZnO solar cells. On this basis, possible strategies for enhancing the cell efficiency are presented and discussed.
机译:提出了曙红-Y(EY)负载的ZnO薄膜的理论研究,这是染料敏化太阳能电池(DSSC)的基本组件。 EY / ZnO纤锌矿(10-10)系统已在周期性方法中使用密度泛函理论(DFT)和混合交换相关函数进行了完整描述。还分析了还原的系统,以模拟电子从染料转移到底物上。使用Newns-Anderson方法计算从染料到半导体的注入时间。最后,使用时变DFT方法模拟了EY / ZnO薄膜的紫外-可见光谱,并将其与溶液中计算出的EY分子的光谱进行了比较。获得的结果突出表明,EY强烈吸附在ZnO衬底上,从而大大促进了吸附系统的电子结构。分离的EY分子吸附在ZnO上时仍会发现其紫外可见光谱特征,但是对Γ点晶体轨道的分析表明,直接HOMO→LUMO激发不能导致电子直接注入半导体,这是第一个未占据的轨道ZnO衬底的贡献是LUMO +1。因此,提出了两种光子注入机理,解释了EY / ZnO太阳能电池的低效率。在此基础上,提出并讨论了提高细胞效率的可能策略。

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  • 来源
    《Journal of the American Chemical Society》 |2009年第40期|14290-14298|共9页
  • 作者单位

    Laboratoire d'Electrochimie, Chimie des Interfaces et Modelisation pour l'Energie,CNRS UMR-7575 Ecole Nationale Superieure de Chimie de Paris, 11 rue P. et M. Curie,F-75231 Paris Cedex 05 France;

    Laboratoire d'Electrochimie, Chimie des Interfaces et Modelisation pour l'Energie,CNRS UMR-7575 Ecole Nationale Superieure de Chimie de Paris, 11 rue P. et M. Curie,F-75231 Paris Cedex 05 France;

    Gaussian, Inc., 340 Quinnipiac Street, Building 40,Wallingford, Connecticut 06492;

    Gaussian, Inc., 340 Quinnipiac Street, Building 40,Wallingford, Connecticut 06492;

    Department of Chemistry, Indiana University,Bloomington, Indiana 47405;

    Laboratoire d'Electrochimie, Chimie des Interfaces et Modelisation pour l'Energie,CNRS UMR-7575 Ecole Nationale Superieure de Chimie de Paris, 11 rue P. et M. Curie,F-75231 Paris Cedex 05 France;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
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  • 正文语种 eng
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  • 入库时间 2022-08-18 03:17:20

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