Role of Edge Engineering in Photoconductivity of Graphene Nanoribbons

摘要

The effect of edge engineering of graphene nanoribbons (GNRs) on their ultrafast photoconductivity is investigated. Three different GNRs were fabricated by bottom-up synthesis in the liquid phase, where structure, width, and edge planarity could be controlled chemically at the atomic level. The charge carrier transport in the fabricated GNRs was studied on the ultrafast, sub-picosecond time scale using time-resolved terahertz spectroscopy, giving access to the elementary parameters of carrier conduction. While the variation of the side chains does not alter the photoconductive properties of GNRs, the edge structure has a strong impact on the carrier mobility in GNRs by affecting the carrier momentum scattering rate. Calculations of the ribbon electronic structure and theoretical transport studies show that phonon scattering plays a significant role in microscopic conduction in GNRs with different edge structures. A comparison between theory and experiment indicates that the mean free path of charge carriers in the nanoribbons amounts to typically ~20 nm.