机译:二维A_xCd_xBi_(4_x)Q_6(A = K,Rb,Cs; Q = S,Se):直接带隙半导体和离子交换材料
Beijing Center for Crystal Research and Development, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, PR China,Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States;
Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States;
Department of Physics & Astronomy, Northwestern University, Evanston, Illinois 60208, United States;
Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States;
Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States;
Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States;
Beijing Center for Crystal Research and Development, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, PR China;
Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States;
机译:空气稳定的直接带隙钙钛矿半导体:全无机锡的异卤卤化物A(X)SnCl(Y)I(Z)(a = Cs,Rb)
机译:拉曼研究基于宽带隙半导体的自旋电子材料
机译:单层AG6S2:首次调查新的二维直接带隙半导体的原理
机译:宽带隙半导体材料的激光直接写入掺杂
机译:采用外延宽带隙半导体的新型器件:物理,电子学和材料表征。
机译:一种新颖的双曲二维碳材料平面内负泊松比行为和低间隙半导体特性
机译:空气稳定直接带隙钙钛矿半导体:全无机锡基异卤氧XcLyiz(a = Cs,Rb)