首页> 外文期刊>Journal of the American Chemical Society >The Two-Dimensional A_xCd_xBi_(4_x)Q_6 (A = K, Rb, Cs; Q = S, Se): Direct Bandgap Semiconductors and Ion-Exchange Materials
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The Two-Dimensional A_xCd_xBi_(4_x)Q_6 (A = K, Rb, Cs; Q = S, Se): Direct Bandgap Semiconductors and Ion-Exchange Materials

机译:二维A_xCd_xBi_(4_x)Q_6(A = K,Rb,Cs; Q = S,Se):直接带隙半导体和离子交换材料

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摘要

We report the new layered chalcogenides A_xCd_xBi_(4-x)Q_6 (A = Cs, Rb, K; Q = S and A = Cs; Q = Se). All compounds are isostructural crystallizing in the ortho-rhombic space group Cmcm, with a = 4.0216(8) A, b = 6.9537(14) A, c = 24.203(5) A for Cs_(1.43) Cd_(1.43)Bi_(2.57)S_6 (x = 1.43); a = 3.9968(8) A, b = 6.9243(14) A, c = 23.700(5) A for Rb_(1.54)Cd_(1.54)Bi_(2.46)S_6 (x = 1.54); a = 3.9986(8) A, b = 6.9200(14) A, c = 23.184(5) A for K_(1.83)Cd_(1.83)Bi_(2.17)S_6 (x = 1.83) and a = 4.1363(8) A, b = 7.1476(14) A, c = 25.047(5) A for Cs_(1.13)Cd_(1.13)Bi_(2.87)Se_6 (x = 1.13). These structures are intercalated derivatives of the Bi_2Se_3 structure by way of replacing some Bi~(3+) atoms with divalent Cd~(2+) atoms forming negatively charged Bi_2Se_3-type quintuple [Cd_xBi_(2-x)Se_3]~(x-) layers. The bandgaps of these compounds are between 1.00 eV for Q = Se and 1.37 eV for Q = S. Electronic band structure calculations at the density functional theory (DFT) level indicate Cs_(1.13)Cd_(1.13)Bi_(2.87)Se_6 and Cs_(1.43)Cd_(1.43)Bi_(2.57)S_6 to be direct band gap semiconductors. Polycrystalline Cs_(1.43)Cd_(1.43)Bi_(2.57)S_6 samples show n-type conduction and an extremely low thermal conductivity of 0.33 W•m~(-1)K~(-1) at 773 K. The cesium ions between the layers of Cs_(1.43)Cd_(1.43)Bi_(2.57)S_6 are mobile and can be topotactically exchanged with Pb~(2+), Zn~(2+), Co~(2+) and Cd~(2+) in aqueous solution. The intercalation of metal cations presents a direct "soft chemical" route to create new materials.
机译:我们报告了新的层状硫族化物A_xCd_xBi_(4-x)Q_6(A = Cs,Rb,K; Q = S和A = Cs; Q = Se)。对于Cs_(1.43)Cd_(1.43)Bi_(2.57),所有化合物均在正交晶格空间群Cmcm中同构结晶,其中a = 4.0216(8)A,b = 6.9537(14)A,c = 24.203(5)A )S_6(x = 1.43);对于Rb_(1.54)Cd_(1.54)Bi_(2.46)S_6(x = 1.54),a = 3.9968(8)A,b = 6.9243(14)A,c = 23.700(5)A;对于K_(1.83)Cd_(1.83)Bi_(2.17)S_6(x = 1.83)和a = 4.1363(8)A,a = 3.9986(8)A,b = 6.9200(14)A,c = 23.184(5)A对于Cs_(1.13)Cd_(1.13)Bi_(2.87)Se_6(x = 1.13),b = 7.1476(14)A,c = 25.047(5)A。这些结构是通过用二价Cd〜(2+)原子取代一些Bi〜(3+)原子形成带负电的Bi_2Se_3型五元组[Cd_xBi_(2-x)Se_3]〜(x- )层。这些化合物的带隙在Q = Se时为1.00 eV,对于Q = S为1.37 eV。在密度泛函理论(DFT)级别上的电子能带结构计算表明Cs_(1.13)Cd_(1.13)Bi_(2.87)Se_6和Cs_ (1.43)Cd_(1.43)Bi_(2.57)S_6是直接带隙半导体。多晶Cs_(1.43)Cd_(1.43)Bi_(2.57)S_6样品在773 K下显示n型导电性和0.33 W•m〜(-1)K〜(-1)的极低导热率。 Cs_(1.43)Cd_(1.43)Bi_(2.57)S_6的层是可移动的并且可以与Pb〜(2 +),Zn〜(2 +),Co〜(2+)和Cd〜(2+ )的水溶液。金属阳离子的插入提供了直接的“软化学”路线来制造新材料。

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  • 来源
    《Journal of the American Chemical Society》 |2017年第20期|6978-6987|共10页
  • 作者单位

    Beijing Center for Crystal Research and Development, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, PR China,Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States;

    Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States;

    Department of Physics & Astronomy, Northwestern University, Evanston, Illinois 60208, United States;

    Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States;

    Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States;

    Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States;

    Beijing Center for Crystal Research and Development, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, PR China;

    Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
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  • 正文语种 eng
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  • 入库时间 2022-08-18 03:07:59

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