...
首页> 外文期刊>Journal of Superconductivity and Novel Magnetism >Contributions from Inter-grain Boundaries to the Magneto-resistive Effect in Polycrystalline High-T C Superconductors. The Underlying Reason of Different Behavior for YBCO and BSCCO Systems
【24h】

Contributions from Inter-grain Boundaries to the Magneto-resistive Effect in Polycrystalline High-T C Superconductors. The Underlying Reason of Different Behavior for YBCO and BSCCO Systems

机译:晶间边界对多晶高T C 超导体磁阻效应的贡献。 YBCO和BSCCO系统行为不同的根本原因

获取原文
获取原文并翻译 | 示例

摘要

In order to clarify the mechanisms in charge of broadening of resistive transition R(T) in magnetic fields of bismuth-based polycrystalline high-T C superconductor (HTSC), a comparative study of Bi1.8Pb0.3Sr1.9Ca2Cu3O x (BSCCO) and YBa2Cu3O7−δ (YBCO) have been performed. Magnetoresistive effects and irreversibility line obtained from magnetic measurements have been studied. It was established that (1) for YBCO, the smooth part of R(T) dependence unambiguously corresponds to dissipation in the intergrain boundaries for arbitrary magnetic fields; (2) for polycrystalline BSCCO, the smooth part of R(T) dependences correspond to dissipation within intergrain boundary subsystem in the field range H102 Oe only, while standard measurements of R(T) dependences in magnetic field range H102 Oe reflect the dissipation processes occurring both in intergrain boundary and HTSC grain subsystems; (3) for the high-field range, the contribution from intergrain boundaries of BSCCO can be distinguished from magnetoresistance R(H) dependences obtained at high enough current density on textured samples. It is proposed that various magneto-resistive properties of these classical HTSC systems are due comparatively weak pinning in BSCCO.
机译:为了阐明铋系多晶高T C 超导体(HTSC)磁场中电阻跃迁R(T)扩展的机理,对Bi1.8 Pb0进行了比较研究.3 Sr1.9 Ca2 Cu3 O x (BSCCO)和YBa2 Cu3 O7-δ (YBCO)已执行。研究了通过磁测量获得的磁阻效应和不可逆线。已经确定:(1)对于YBCO,R(T)依赖关系的平滑部分明确对应于任意磁场的晶界边界中的耗散; (2)对于多晶BSCCO,R(T)依赖的平滑部分仅对应于H <102 Oe场范围内晶界边界子系统内的耗散,而磁场范围R(T)依赖的标准测量值H> 102 Oe反映了晶界和HTSC晶粒子系统中的耗散过程。 (3)对于高场范围,BSCCO晶粒间界的贡献可以与在足够高的电流密度下在织构样品上获得的磁阻R(H)依赖性区分开。提出这些经典HTSC系统的各种磁阻特性是由于BSCCO中的相对弱的钉扎。

著录项

相似文献

  • 外文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号