Vein detection with near-infrared organic photodetectors for biometric authentication

摘要

We combine a low dark current and high-detectivity near-infrared (NIR)-sensitive organic photodetector with a high-resolution 508 pixels per inch (ppi) oxide thin-film transistor (TFT) backplane to create a large-area thin NIR detector, using processes that are compatible with flat-panel display fabrication. The detector is characterized showing high uniformity and linearity. With the use of a NIR light source, the detector is capable of imaging the (pattern of) veins under the skin in reflection, leading to improved biometric authentication.