DIELECTRONIC RECOMBINATION OF Ni-, Cu-, AND Ar-LIKE TUNGSTEN AND BARIUM THROUGH THE LOW INNER-SHELL EXCITED CONFIGURATIONS INCLUDING COLLISION PROCESSES

摘要

Level-by-level relativistic calculations of dielectronic recombination (DR) cross sections and rate coefficients for Ni-, Cu-, and Ar- like tungsten in the ground state were performed. Similar calculations were carried out for Ni-like barium for comparison. The most important low-lying inner-shell excited configuration complexes are taken into account, namely (3p3d)~154141′ for Ni-like W and Ba, (3p3d)~154s4141′ for Cu-like W, and finally 3p~53d91, 3s3p~63d71, and 3p~54141′ for Ar-like W. These complexes give the dominant contributions to the total DR rate coefficients for kT_e < 0.5 keV, and are still expected to give major contributions at higher electron temperature. Configuration mixing is taken into account when significant.