...
首页> 外文期刊>Journal of power sources >Fluorine-doped tin oxide/ hematite/ Ni(OH)_2/ Prussian white photoelectrode for use in a visible-light-assisted pseudocapacitor
【24h】

Fluorine-doped tin oxide/ hematite/ Ni(OH)_2/ Prussian white photoelectrode for use in a visible-light-assisted pseudocapacitor

机译:用于可见光辅助伪电容器的掺氟氧化锡/赤铁矿/ Ni(OH)_2 /普鲁士白光电极

获取原文
获取原文并翻译 | 示例

摘要

Herein, a fluorine-doped tin oxide/hematiteickel hydroxide/Prussian white photoelectrode is fabricated for use in a visible-light-assisted pseudocapacitor. A visible-light-assisted pseudocapacitor is a two-electrode device that uses both electrical and solar energy sources to charge and store energy. The photoelectrode consists of a thin layer of Prussian white deposited on a nickel hydroxide modified hematite film. The hematite is used as a photoactive material, nickel hydroxide and Prussian white are employed as the pseudo-capacitive electroactive materials. Fluorine-doped tin oxide/hematiteickel hydroxide/Prussian white has a much higher charge-discharge time and areal capacitance under illumination. A galvanostatic charge-discharge curve shows an areal capacitance of 2.16 mF cm(-2) under illumination, that is 940-fold higher than that in the dark. This behavior is attributed to the presence of photogenerated charges that increase the conductivity and facilitate charge transfer reactions. The electrochemical impedance spectroscopy shows that the charge transfer resistance under illumination is 633 Omega which is more than three times lower than 2220 Omega under dark. Therefore, under dark pseudocapacitive charge storage reactions do not occur significantly, because of the high resistance of semiconductor. While under illumination, photogenerated charges reduce charge transfer resistance. Thus, the pseudocapacitive reaction is progressed and the charge is stored.
机译:在此,制造了用于可见光辅助的伪电容器中的氟掺杂的氧化锡/赤铁矿/氢氧化镍/普鲁士白光电极。可见光辅助伪电容器是一种两电极设备,它同时使用电能和太阳能来充电和存储能量。光电极由沉积在氢氧化镍改性的赤铁矿膜上的普鲁士白薄层组成。赤铁矿用作光敏材料,氢氧化镍和普鲁士白用作假电容电活性材料。氟掺杂的氧化锡/赤铁矿/氢氧化镍/普鲁士白在照明条件下具有更长的充放电时间和面电容。恒电流充放电曲线显示在光照下的面积电容为2.16 mF cm(-2),比黑暗中的电容高940倍。此行为归因于光生电荷的存在,该电荷增加了电导率并促进了电荷转移反应。电化学阻抗谱显示,在光照下的电荷转移电阻为633Ω,比黑暗下的2220Ω低三倍以上。因此,在黑暗中,由于半导体的高电阻,伪电容存储反应不会显着发生。在光照下,光生电荷会降低电荷转移阻力。因此,进行了假电容反应并存储了电荷。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号