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Sodium-ion conduction in Na_2Zn_2TeO_6 solid electrolytes

机译:Na_2Zn_2TeO_6固体电解质中的钠离子传导

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摘要

The ionic conduction in a novel solid sodium-ion conductor of Na2Zn2TeO6 (NZTO) is investigated from the point of view of defect chemistry. NZTO shows an ionic conductivity of 0.57 mS cm(-1) at room temperature, and the grain bulk conductivity and the grain-boundary conductivity are individually measured using the AC impedance spectroscopy at temperatures down to - 30 degrees C. The grain-boundary conductivities are about two orders of magnitude lower than those of the grain bulk; such a phenomenon can be ascribed to the Schottky barrier at the grain boundaries of the NZTO electrolyte. The concentration and mobility of the charge carriers in the grain bulk are calculated from the grain bulk conductivity. The concentration and mobility of the charge carriers and the Schottky barrier height can be tuned by doping; the ionic conductivity of NZTO is enhanced to 0.83 mS cm(-1) by the doping of 2.5 mol% Ga at the Zn sites, because the Ga-doping increases the concentration and mobility of the charge carriers, and lowers the Schottky barrier height.
机译:从缺陷化学的角度研究了一种新型的Na2Zn2TeO6(NZTO)固体钠离子导体中的离子传导。 NZTO在室温下显示为0.57 mS cm(-1)的离子电导率,并且在低至-30摄氏度的温度下使用AC阻抗光谱法分别测量了晶粒体积电导率和晶界电导率。晶界电导率比谷物的体积低两个数量级;这种现象可以归因于NZTO电解质的晶界处的肖特基势垒。由晶粒体积电导率计算晶粒中的电荷载流子的浓度和迁移率。电荷载流子的浓度和迁移率以及肖特基势垒高度可以通过掺杂来调整。通过在Zn位置掺杂2.5 mol%的Ga,可以将NZTO的离子电导率提高到0.83 mS cm(-1),因为Ga掺杂会增加电荷载流子的浓度和迁移率,并降低肖特基势垒高度。

著录项

  • 来源
    《Journal of power sources》 |2018年第31期|513-518|共6页
  • 作者

    Wu Jian-Fang; Wang Qi; Guo Xin;

  • 作者单位
  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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