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首页> 外文期刊>Journal of microanolithography, MEMS, and MOEMS >Process monitoring using automatic physical measurement based on electrical and physical variability analysis
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Process monitoring using automatic physical measurement based on electrical and physical variability analysis

机译:使用基于电气和物理可变性分析的自动物理测量进行过程监控

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A fully automated silicon-based methodology for systematic analysis of electrical features is shown. The system was developed for process monitoring and electrical variability reduction. A mapping step was created by dedicated structures such as static-random-access-memory (SRAM) array or standard cell library, or by using a simple design rule checking run-set. The resulting database was then used as an input for choosing locations for critical dimension scanning electron microscope images and for specific layout parameter extraction then was input to SPICE compact modeling simulation. Based on the experimental data, we identified two items that must be checked and monitored using the method described here: transistor's sensitivity to the distance between the poly end cap and edge of active area (AA) due to AA rounding, and SRAM leakage due to a too close N-well to P-well. Based on this example, for process monitoring and variability analyses, we extensively used this method to analyze transistor gates having different shapes. In addition, analysis for a large area of high density standard cell library was done. Another set of monitoring focused on a high density SRAM array is also presented. These examples provided information on the poly and AA layers, using transistor parameters such as leakage current and drive current. We successfully define "robust" and "less-robust" transistor configurations included in the library and identified unsymmetrical transistors in the SRAM bit-cells. These data were compared to data extracted from the same devices at the end of the line. Another set of analyses was done to samples after Cu M1 etch. Process monitoring information on M1 enclosed contact was extracted based on contact resistance as a feedback. Guidelines for the optimal M1 space for different layout configurations were also extracted. All these data showed the successful in-field implementation of our methodology as a useful process monitoring method.
机译:显示了用于电气特性系统分析的基于硅的全自动方法。该系统是为过程监控和减少电气变化而开发的。映射步骤是通过专用结构(如静态随机访问内存(SRAM)阵列或标准单元库)创建的,或者通过使用简单的设计规则检查运行集来创建的。然后,将所得数据库用作输入,以选择用于关键尺寸扫描电子显微镜图像的位置,并用于特定布局参数提取,然后将其输入到SPICE紧凑模型仿真中。根据实验数据,我们确定了必须使用此处描述的方法进行检查和监视的两个项目:晶体管对多晶硅端盖与有源区域边缘之间AA距离(AA)的敏感度(由于AA舍入)以及由于N井与P井的距离太近。基于此示例,为了进行过程监控和可变性分析,我们广泛使用此方法来分析具有不同形状的晶体管栅极。另外,分析了大面积的高密度标准细胞文库。还介绍了另一组针对高密度SRAM阵列的监视。这些示例使用晶体管参数(例如泄漏电流和驱动电流)提供了多晶硅层和AA层的信息。我们成功定义了库中包含的“健壮”和“较不健壮”的晶体管配置,并在SRAM位单元中确定了非对称晶体管。将这些数据与在行尾从相同设备提取的数据进行比较。对Cu M1蚀刻后的样品进行了另一组分析。基于接触电阻作为反馈提取有关M1封闭触点的过程监控信息。还提取了针对不同布局配置的最佳M1空间的准则。所有这些数据表明,我们的方法已成功地在现场实施,是一种有用的过程监控方法。

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