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Solid state characterization of coprecipitated alumina-gallia mixed oxide powders

机译:共沉淀氧化铝-氧化镓混合氧化物粉末的固态表征

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Powders with composition (Al x Ga 1−x )2O3 (x = 0, 0.25, 0.50, 0.75, 1) have been prepared by coprecipitation from aluminum nitrate and gallium nitrate and have been charaterized after drying at 373 K and calcination at 673, 1073 and 1473 K, using XRD, DTA, FT-IR and diffuse reflectance UV-VIS and BET surface area and porosity measurements. At 373 K Al compounds are essentially amorphous and for the Ga0.75 Al0.25 sample a solubility of 12% of Al3+ in the diaspore type α-GaOOH has been calculated. In samples calcined at 673 and 1073 K for the Al-rich ones a poorly crystalline defective spinel-type phase γ -Al2O3 has been found while the Ga-rich materials are composed of the metastable corundum type phase α-Ga2O3 and the thermodynamically β -Ga2O3 at 673 and 1073 K respectively. Al3+ added to α-Ga2O3 tends to hinder the α→ β phase transition of gallium oxide. At 1473 K mixed oxides give rise the thermodynamically stable α-Al2O3 and β-Ga2O3 phases. Reciprocal solubilities of Ga and Al in their oxides have been calculated.
机译:从硝酸铝中共沉淀制备了成分为(Al x Ga 1-x )2 O3 (x = 0,0.25,0.50,0.75,1)的粉末使用XRD,DTA,FT-IR以及漫反射率UV-VIS和BET表面积和孔隙率测量,在373 K下干燥并在673、1073和1473 K下煅烧后,已表征了硝酸镓和硝酸镓。在373 K处,Al化合物基本上是非晶态的,对于Ga0.75 Al0.25 样品,已计算出12%Al3 + 在渗孔型α-GaOOH中的溶解度。在673和1073 K下煅烧的富Al样品中,发现了晶态不良的尖晶石型相γ-Al2 O3 ,而富Ga的材料则由亚稳刚玉类型组成α-Ga2 O3 相和热力学β-Ga2 O3 分别在673和1073 K处。添加到α-Ga2 O3 中的Al3 +倾向于阻碍氧化镓的α→β相变。在1473 K,混合氧化物产生了热力学稳定的α-Al2 O3 和β-Ga2 O3 相。已经计算出Ga和Al在其氧化物中的互溶性。

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  • 来源
    《Journal of Materials Science 》 |2005年第8期| 2013-2021| 共9页
  • 作者单位

    Departamento de Química Inorgánica Universidad de Salamanca;

    Departamento de Química Inorgánica Lab. Complutense de Altas Presiones Universidad Complutense;

    Departamento de Química Inorgánica Universidad de Salamanca;

    Departamento de Química Inorgánica Lab. Complutense de Altas Presiones Universidad Complutense;

    Departamento de Química Inorgánica Lab. Complutense de Altas Presiones Universidad Complutense;

    Dipartimento di Ingegneria Chimica e di Processo Università di Genova;

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