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Wetting of calcium fluoride by liquid metals

机译:液态金属润湿氟化钙

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The results of wetting experiments for the CaF2/Me and CaF2/Me–Ti systems (Me = Cu, Ge, Al, In, Ga, Sn, and Au) are presented and discussed. It was found that pure metals do not wet the CaF2 substrate, while a small quantity of Ti added to the melt improves the wetting. The effect of Ti depends on its thermodynamic activity in the melts. According to the thermodynamic analysis and experimental observations, Ti dissolved in the metals does not react with the substrate to form any new condensed phase at the interface and its effect cannot be attributed to the “reactive wetting” phenomenon. Density functional theory (DFT) was applied to focus on the nature of chemical bonding between the atoms in the melt and the surface of the substrate in these systems. It was demonstrated that partly filled d-states of Ti stimulate its adsorption onto F ions. Ab initio calculations show that Ti may segregate to the interface, decreasing the energy of CaF2/Me–Ti system. Based on the results of thermodynamic and DFT analyses, it is proposed that Ti segregation at the interface may be considered as the source of the improved wetting.
机译:介绍并讨论了CaF2 / Me和CaF2 / Me-Ti系统(Me = Cu,Ge,Al,In,Ga,Sn和Au)的润湿实验结果。发现纯金属不会润湿CaF2 衬底,而少量的Ti添加到熔体中可以改善润湿性。 Ti的作用取决于其在熔体中的热力学活性。根据热力学分析和实验观察,溶解在金属中的Ti不会与基材发生反应,在界面处形成任何新的凝结相,其作用不能归因于“反应性润湿”现象。在这些系统中,应用密度泛函理论(DFT)来关注熔体中原子与基材表面之间化学键的性质。结果表明,部分填充的d态Ti会刺激其吸附到F离子上。从头算计算表明,Ti可能会偏析到界面上,从而降低CaF2 / Me-Ti系统的能量。根据热力学和DFT分析的结果,建议将界面处的Ti偏析视为改善润湿性的来源。

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  • 来源
    《Journal of Materials Science 》 |2012年第24期| p.8404-8418| 共15页
  • 作者单位

    NRC-Negev, P.O. Box 9001, 84190, Beersheba, Israel;

    Department of Material Engineering, Ben-Gurion University of the Negev, P.O. Box 653, 84105, Beersheba, Israel;

    Department of Material Engineering, Ben-Gurion University of the Negev, P.O. Box 653, 84105, Beersheba, Israel;

    Department of Material Engineering, Ben-Gurion University of the Negev, P.O. Box 653, 84105, Beersheba, Israel;

    Department of Material Engineering, Ben-Gurion University of the Negev, P.O. Box 653, 84105, Beersheba, Israel;

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