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Composite of aromatic polythiourea/BaTiO_3 nanowires with high energy density and high discharge efficiency for energy storage applications

机译:芳族多核/ BATIO_3纳米线的复合材料具有高能量密度和高放电效率的能量存储应用

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摘要

Ceramic /polymer nanocomposites have shown great potential in high energy storage density capacitors for pulsed power applications. However, due to the difference in surface energy between inorganic fillers and polymers, the discharge energy density and efficiency of nanocomposites are limited. In this article, the BaTiO_3 (BT) nanowires (NWs) modified with dopamine (Dopa) was introduced into aromatic polythiourea (ArPTU) polymer matrix as composite for high-performance dielectrics. This is a new path about the introduction of a high dielectric constant ceramic into high dipole moment linear polymers (HDMLP), which produces the polymer composite with high energy storage density and high discharge efficiency. The composite ArPTU/BT NWs shows an energy density of 7.5 J cm~(-3) and high efficiency more than 90% is obtained under an electric field of 250 MV m~(-1) It also has been found that the modification of BT NWs with the Dopa reduces the dielectric loss of composite effectively due to the good synergistic effective between ArPTU and BT NWs, and high stability of composite for energy storage is also achieved. This work provides an effective solution for achieving high energy storage density and high discharge efficiency in polymer dielectrics for practical capacitor applications.
机译:陶瓷/聚合物纳米复合材料在脉冲功率应用中显示了高能量存储密度电容器的巨大潜力。然而,由于无机填料和聚合物之间的表面能差,纳米复合材料的放电能量密度和效率受到限制。在本文中,用多巴胺(DOPA)改性的BATIO_3(BT)纳米线(NWS)被引入芳族多核(ARPTU)聚合物基质中作为高性能电介质的复合材料。这是关于将高介电常数陶瓷引入高偶极矩线性聚合物(HDMLP)的新路径,其产生具有高储能密度和高放电效率的聚合物复合物。复合ARPTU / BT NWS显示了7.5J厘米〜(-3)的能量密度,并且在250 mV m〜(-1)的电场下获得了高于90%的高效率,也发现了改变由于ARPTU和BT NWS之间的良好协同性,并且还达到了储能的高稳定性,具有DOPA的BT NWS可有效降低了复合材料的介电损耗。该工作提供了实现高能量存储密度和高放电效率的实用电容器应用的有效解决方案。

著录项

  • 来源
    《Journal of materials science》 |2021年第14期|19309-19326|共18页
  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China (UESTC) Chengdu 610054 People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China (UESTC) Chengdu 610054 People's Republic of China;

    Sichuan YongXing Electronics Co. Ltd Chengdu 610500 People's Republic of China;

    Chongqing Engineering Research Center of New Energy Storage Devices and Applications Chongqing 402160 People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China (UESTC) Chengdu 610054 People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China (UESTC) Chengdu 610054 People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China (UESTC) Chengdu 610054 People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China (UESTC) Chengdu 610054 People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China (UESTC) Chengdu 610054 People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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