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Growth and characterization of pure and metals-doped organic nonlinear optical single crystal: L-alanine alaninium nitrate (LAAN)

机译:纯净金属掺杂有机非线性光学单晶的生长和表征:L-丙氨酸亚氨酸盐(Laan)

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摘要

The pure and metal ion (Cu~(2+), Zn~(2+) and Mg~(2+))-doped LAAN single crystal was developed by slow evaporation technique under ambient temperature. Cell parameters of the grown crystal were identified using single crystal X-ray diffraction analysis and found that the material crystallizes in orthorhombic crystal system with space group of P21.The presence of functional groups and the spectral properties were assessed by FTIR analysis. Transmittance spectrum reveals that the crystal has a low UV cut-off of 360 nm and has a good transmittance in the entire visible region. The band gap energy of LAAN and doped (Zn, Cu and Mg) LAAN crystals were estimated to be 3.38, 3.22, 2.75, and 3.13 eV by Tauc plot. Prevention of the recombination process of electron-hole pair was also confirmed by photoluminescence spectra analysis. The dielectric constant of pure crystal was found to be less than that of doped crystals. The AC conductivity was found to increase after doping and with the increase in temperature. Second harmonic generation efficiency of the grown crystal has been measured by Kurtz and Perry technique and it was found that Cu-doped LAAN is 3.2 times higher than that of KDP and 2.1, 1.5, and 1.8 times more prominent than pure, Zn, and Mg-doped LAAN crystals, respectively.
机译:通过缓慢蒸发技术在环境温度下显造纯净和金属离子(Cu〜(2+),Zn〜(2+)和Mg〜(2+)) - 掺杂的Laan单晶。使用单晶X射线衍射分析鉴定生长晶体的细胞参数,发现该材料在具有P21的空间组的正交晶体系统中结晶。通过FTIR分析评估官能团的存在和光谱性能。透射谱揭示晶体具有360nm的低UV切断,并且在整个可见区域中具有良好的透射率。估计LaAn和掺杂(Zn,Cu和Mg)LaAn晶体的带隙能量为3.38,3.22,2.75和3.13eV。通过光致发光光谱分析,还证实了电子 - 孔对的重组过程的预防。发现纯晶体的介电​​常数小于掺杂晶体的介电​​常数。发现交流电导率在掺杂后和温度升高。通过Kurtz和Perry技术测量生长晶体的二次谐波产生效率,发现Cu-掺杂的Laan比纯,Zn和Mg更突出的3.2倍。比纯,Zn和Mg更突出的3.2倍 - 分别是Laan晶体。

著录项

  • 来源
    《Journal of materials science》 |2021年第4期|3979-3988|共10页
  • 作者

    G. Krishnamoorthi; R. Uvarani;

  • 作者单位

    PG and Research Department of Physics Thiruvalluvar Government Arts College Rasipuram Tamil Nadu 637401 India;

    PG and Research Department of Physics Thiruvalluvar Government Arts College Rasipuram Tamil Nadu 637401 India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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