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首页> 外文期刊>Journal of materials science >Influence of thiourea in the precursor solution on the structural, optical and electrical properties of CZTS thin films deposited via spray coating technique
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Influence of thiourea in the precursor solution on the structural, optical and electrical properties of CZTS thin films deposited via spray coating technique

机译:硫脲在通过喷涂技术沉积的CZTS薄膜结构,光学和电性能的影响

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摘要

CZTS films were prepared by spray coating using non-aqueous precursor solutions with and without sulphur source and studied their structural, optical and electrical properties. The films prepared by both the routes were sulphurized at different temperatures to study the effect of temperature on the phase formation. Phase purity was confirmed by XRD, Raman analysis and Rietveld refinement technique. The studies revealed proper phase and crystallinity for the films of both routes sulphurized at 550 °C. These films exhibited dense and improved grain structure, optimal bandgap and higher absorption coefficient. The non-thiourea films sulphurized at 550 °C had a carrier concentration of 1.544 × 10~(19) cm~(-3), mobility of 0.87 cm~2V~(-1) s~(-1) and resistivity of 0.46 Ω·cm, while the thiourea films achieved carrier concentration, mobility and resistivity of 3.67 × 10~(1-) cm~(-3), 0.33 cm~2V~(-1)s~(-1) and 0.52 Ω·cm, respectively. The comparative study demonstrates that the films under investigation have the potential for the fabrication of efficient solar cells.
机译:CZTS薄膜通过使用具有和不含硫源的非水性前体溶液来制备喷涂涂料,并研究了它们的结构,光学和电性能。通过途径制备的薄膜在不同的温度下硫化,以研究温度对相形成的影响。通过XRD,拉曼分析和RIETVELD细化技术确认相纯度。研究显示了在550℃下硫化的两种途径的适当相和结晶度。这些薄膜表现出致密且改善的晶粒结构,最佳的带隙和更高的吸收系数。在550℃下硫化的非硫脲膜的载体浓度为1.544×10〜(19)cm〜(-3),0.87cm〜2V〜(-1)〜(-1)的迁移率和0.46的电阻率ω·cm,而硫脲膜达到载体浓度,迁移率和电阻率为3.67×10〜(1-)cm〜(-3),0.33cm〜2V〜(-1)〜(-1)和0.52Ω· CM分别。比较研究表明,正在研究的薄膜具有有效的太阳能电池的制造潜力。

著录项

  • 来源
    《Journal of materials science 》 |2021年第4期| 4146-4156| 共11页
  • 作者单位

    Centre for Materials for Electronics Technology (C-MET) Scientific Society Ministry of Electronics & Information Technology Government of India Shoranur Road Athani P.O Thrissur 680 581 India;

    Centre for Materials for Electronics Technology (C-MET) Scientific Society Ministry of Electronics & Information Technology Government of India Shoranur Road Athani P.O Thrissur 680 581 India;

    Centre for Materials for Electronics Technology (C-MET) Scientific Society Ministry of Electronics & Information Technology Government of India Shoranur Road Athani P.O Thrissur 680 581 India;

    Centre for Materials for Electronics Technology (C-MET) Scientific Society Ministry of Electronics & Information Technology Government of India Shoranur Road Athani P.O Thrissur 680 581 India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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