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Synthesis and optimisation of MXene for supercapacitor application

机译:超级电容器应用的MXENE的合成与优化

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摘要

MXene belongs to the family of 2D carbides and nitrides. The controlling of process parameters is key to obtain high-quality MXene films. The layered structure of MXene is obtained successfully by tuning the process parameters which is confirmed through the presence of XRD peak (110) at 2 theta value of 60 degrees. Moreover, the accordion-like structure of MXene is confirmed through SEM which is also highly dependent on the process parameters. It is also observed that if the etchant with sufficient concentration is used for an optimised time the (002) peak gets shifted to a lower angle and confirms the increase in spacing of MXene layers to 12.92 A. Further reduction in the etching time leads to a decrease in the d-spacing of MXene layers due to the presence of aluminium and the presence of defects corresponding to the unsuccessful removal of AlF_3 by-products which is confirmed by (106), (108) and (109) XRD peaks. However, the occurrence of (106), (108) and (109) peaks which correspond to the growth of AlF_3 is highly dependent on any variation in process parameters. The increase in the quantity also impacts the properties of MXene formed. It can be seen that increasing the quantity of hydrofluoric acid will lead to thicken the MXene layers. If etching is done for the greater quantity of HF, the toxicity is increased which leads to the greater number of fluorine groups which will lead to an increase in the number of defects in the MXene material. This paper also discusses the correlation of process parameters with that of the electrical properties of MXene layers. It is found that to get the best MXene layers in terms of structurally and electrically, the process parameters need to tune in such a way that the etching of aluminium can be done completely without increasing the fluorine content in the MXene. Herein, we report for the first time the fabrication of best optimised MXene film on the flexible polypropylene (PP) substrate using the best optimised parameters for super-capacitor applications and compared with the Polyethylene terephthalate (PET) and glass substrate results. The PP-supported MXene device exhibits lower contact resistance of 141 ohms and the areal capacitance of 82.6mF/cm~2 at 5 mV/s and capacitive retention of 73.3%. The study opens up new possible designs for the high-performance devices employing different flake sizes, morphologies of MXene and their combinations.
机译:MXENE属于2D碳化物和氮化物的家庭。处理过程参数的控制是获得高质量MxENE薄膜的键。通过调节通过在2θ值为60度的XRD峰(110)的情况下通过存在确认的工艺参数来成功获得MXEN的层状结构。此外,通过SEM确认MXENE的手风琴状结构,其也高度依赖于工艺参数。还观察到,如果使用足够浓度的蚀刻剂用于优化的时间,则(002)峰被移位到较低的角度并确认Mxene层间距的增加至12.92A。进一步减少蚀刻时间导致蚀刻时间由于铝的存在和存在于由(106),(108)和(109)XRD峰确认的ALF_3副产物的不成功除去的缺陷的缺陷的D-间距降低。然而,对应于ALF_3的生长的(106),(108)和(109)峰的发生高度依赖于工艺参数的任何变化。数量的增加也影响了所形成的mxene的性质。可以看出,增加氢氟酸的量将导致蒙薄层加厚。如果为更大量的HF进行蚀刻,则增加毒性,其导致更多的氟基团,这将导致MxEne材料中缺陷的数量增加。本文还讨论了工艺参数与MxENE层的电特性的相关性的相关性。发现,为了在结构上和电动方面获得最佳的MXENE层,过程参数需要以这样的方式调谐,即铝的蚀刻可以完全完成而不增加MXENE中的氟含量。在此,我们将首次报告在柔性聚丙烯(PP)衬底上使用最佳优化的超级电容器应用的最佳优化参数来制备最佳优化的偏膜膜,并与聚对苯二甲酸乙二醇酯(PET)和玻璃基板的结果进行比较。 PP支撑的MXENE装置具有141欧姆的较低接触电阻,82.6mF / cm〜2的面积电容为5mV / s,电容性保留为73.3%。该研究开辟了采用不同薄片尺寸,MXENE形态及其组合的高性能设备的新可能设计。

著录项

  • 来源
    《Journal of materials science 》 |2020年第21期| 18614-18626| 共13页
  • 作者

    R.Garg; A.Agarwal; M.Agarwal;

  • 作者单位

    Department of Electronics and Communication Engineering Thapar Institute of Engineering and Technology Patiala Punjab 147004 India;

    Department of Electronics and Communication Engineering Thapar Institute of Engineering and Technology Patiala Punjab 147004 India;

    Department of Electronics and Communication Engineering Thapar Institute of Engineering and Technology Patiala Punjab 147004 India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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