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首页> 外文期刊>Journal of materials science >Bi-stable magnetoelectric data flip-flop triggered by magnetic field
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Bi-stable magnetoelectric data flip-flop triggered by magnetic field

机译:由磁场触发的双稳态磁电数据触发器

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摘要

A magnetoelectric (ME) D-FF device in composite of Ni-Zn ferrite/PZT/ Ni-Zn ferrite symmetrical laminate with coil wound around it has been presented. Taking advantage of remnant magnetization effect and ME coupling mediated by strain controlled by bias magnetic field, non-volatile ME voltage of + 60.3 mV and - 59.4 mV can be clearly observed at the EMR of 58 kHz in absence of H_(DC). Moreover, two types of ME voltages between + 234.4 mV and - 233 mV are switched due to the magneto-mechanic strain variation, when H_(DC) jumps from + 38 Oe to - 38 Oe, or vice versa. The functions of logic "tracking" and "holding", O_(n+1) = D_1 or O_(n+1) = O_n, are observed at running time. These findings provide great possibilities of the D-FF (counter) based on ME composite applied in proximity readers, to effectively avoid the issues of the high consumption due to using conventional D-FF/counter.
机译:介绍了一种磁电(ME)D-FF器件,在Ni-Zn铁氧体/ PZT / Ni-Zn铁氧体对称层叠体的复合材料中,提出了线圈缠绕在其周围。利用残余磁化效果和通过偏置磁场控制的应变介导的耦合,在不存在H_(DC)的情况下,可以在58kHz的EMR中清楚地观察到+ 60.3mV和-59.4mV的非挥发性ME电压。此外,当H_(DC)从+ 38 OE到-38 OE跳跃时,由于磁力 - 机械应变变化,两种类型的ME电压在+ 234.4mV和-333 mV之间切换,或者从+ 38 OE跳跃,反之亦然。在运行时观察逻辑“跟踪”和“保持”,O_(n + 1)= d_1或O_(n + 1)= O_n的函数。这些发现提供了基于在邻近读取器中应用的ME复合材料的D-F​​F(计数器)的极大可能性,以有效地避免由于使用传统的D-FF /计数器而导致的高消耗问题。

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  • 来源
    《Journal of materials science》 |2021年第2期|2249-2257|共9页
  • 作者单位

    College of Electrical and Information Engineering Zhengzhou University of Light Industry Zhengzhou 450002 China;

    College of Electrical and Information Engineering Zhengzhou University of Light Industry Zhengzhou 450002 China;

    College of Electrical and Information Engineering Zhengzhou University of Light Industry Zhengzhou 450002 China;

    Institute of Electronic and Information Systems Novgorod State University Veliky Novgorod 173003 Russia;

    College of Electrical and Information Engineering Zhengzhou University of Light Industry Zhengzhou 450002 China;

    State Grid of Jiangsu Electric Power Co. Ltd. Nanjing 210024 China;

    College of Electrical and Information Engineering Zhengzhou University of Light Industry Zhengzhou 450002 China;

    College of Electrical and Information Engineering Zhengzhou University of Light Industry Zhengzhou 450002 China;

    Physics Department Oakland University Rochester MI 48309 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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