机译:通过CE〜(4+)和Nb〜(5+)掺杂PZT95 / 5的强烈增强的极化和介电击穿强度
Department of Applied Sciences Punjab Engineering College (Deemed To Be University) Chandigarh 160012 India;
Department of Physics Tilak Dhari PG College Jaunpur 222002 India;
Department of Electronics and Communication Engineering Punjab Engineering College (Deemed To Be University) Chandigarh 160012 India;
Department of Applied Sciences Punjab Engineering College (Deemed To Be University) Chandigarh 160012 India;
机译:介电特性对(Zn_(1/3)A_(2/3))_(0.5)(Ti_(1-x)B_x)_(0.5)O_2(A = Nb〜(5+), Ta〜(5+),B = Ge〜(4+),Sn〜(4+))陶瓷
机译:介电特性对(Zn_(1/3)A_(2/3))_(0.5)(Ti_(1-x)B_x)_(0.5)O_2(A = Nb〜(5+), Ta〜(5+),B = Ge〜(4+),Sn〜(4+))陶瓷
机译:(Zn_(1/3)B_(2/3))_(0.5)(Ti_(0.8)M_(0.2))_(0.5)O_2(B = Nb〜(5+),Ta〜( 5 +),M = Sn〜(4 +),Ge〜(4+))陶瓷
机译:Fe〜(3 +)/ Nb〜(5+)杂化钛酸钡陶瓷的铁电和介电老化效应
机译:电极几何形状和介电介质对多晶氧化铝介电击穿强度的影响。
机译:(Nb + In)共掺杂TiO2单晶的介电常数的本征增强
机译:用于高能量密度电容器的全有机夹层结构聚(偏二氟乙烯)基介电膜中增强的电极化和击穿强度