Tailoring the low dielectric constant in glutamic acid doped ammonium dihydrogen phosphate single crystal by virtue of MPa shock waves for microelectronic applications: the complex impedance and modulus formulation studies

摘要

Ammonium Dihydrogen Phosphate, ADP, (NH_4H_2PO_4) crystal has a wide range of applications in integrated and nonlinear optics. The amino acid-like L-glutamic acid (C_5H_9O_4N) causes the defect in the framework of ADP crystal. The 0.6wt% L-glutamic acid doped ADP crystal is grown using the slow evaporation technique. The grown crystal is subjected under the Shockwave of Mach number 1.7 and shock number 2, 4 and 6. The Powder XRD study shows the lattice strain introduced in the structure of grown crystals due to impose of the Shockwave. The Photoluminescence confirmed the presence of D-defect and Self Trapped Excitons. The influence of Shockwave on dielectric, impedance and modulus properties of glutamic acid doped ADP crystal is well studied in the frequency range of 100 Hz to 10 MHz and the temperature range of 323 K to 373 K. The Shockwave is reduced the dielectric constant, A.C. Conductivity, strength of polarizibility and the grain capacitance. The Correlation Barrier Hopping (CBH) conduction mechanism is well studied for pristine and shocked glutamic acid doped ADP crystals over the temperature range considered. The presence of grain over the frequency range considered is identified and confirmed using the complex impedance and the complex modulus spectroscopy. The pristine and shocked glutamic acid doped ADP crystals have possessed the temperature-independent, Non-Debye type relaxation process. The results are discussed here.