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Comparison of reversible photodarkening in As_2S_3 and As_2Se_3 amorphous thin films

机译:As_2S_3和As_2Se_3非晶薄膜中可逆光暗化的比较

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摘要

Photoinduced darkening of well annealed amorphous As_2S_3 and As_2Se_3 films induced by exposure to near-band gap monochromatic light with various intensities was studied. Under well comparable conditions of exposure the magnitude of photodarkening of As_2S_3 exceeds the one of As_2Se_3. In both cases, the kinetics of photoinduced darkening follows single exponential and the formal rate constant of photodarkening of As_2S_3 was found almost one order magnitude higher compared to As_2Se_3. Exposure by medium and high intensities enhances the red shift of the gap. This enhancement is, however, unstable and can be erased either by a dark relaxation or by illumination using the same near-band gap monochromatic light with low intensity. Observed differences in photodarkening of As_2S_3 and As_2Se_3 thin films are briefly discussed.
机译:研究了退火后的非晶态As_2S_3和As_2Se_3薄膜在不同强度的近带隙单色光下的光诱导变暗。在可比的曝光条件下,As_2S_3的光暗化程度超过了As_2Se_3之一。在这两种情况下,光致变黑的动力学都遵循单指数,并且发现As_2S_3的光暗化形式速率常数比As_2Se_3高出近一个数量级。中强度和高强度的曝光会增强间隙的红移。然而,这种增强是不稳定的,并且可以通过暗弛豫或通过使用相同的低强度的近带隙单色光照明来消除。简要讨论了As_2S_3和As_2Se_3薄膜的光暗化差异。

著录项

  • 来源
    《Journal of materials science》 |2007年第s1期|S251-S255|共5页
  • 作者

    M. Munzar; L. Tichy;

  • 作者单位

    Joint Laboratory of Solid State Chemistry of Institute of Macromolecular Chemistry, Academy of Sciences of the Czech Republic and University of Pardubice, Pardubice 532 10, Czech Republic;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;计量学;
  • 关键词

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