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Electrochemical performance of conducting polymer and its nanocomposites prepared by chemical vapor phase polymerization method

机译:化学气相聚合法制备的导电聚合物及其纳米复合材料的电化学性能

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摘要

In this work, conducting polymers poly(3, 4-ethylenedioxythiophene) (PEDOT), PEDOT/carbon nanotubes (CNTs), and PEDOT/reduced graphene oxide (RGO) were prepared via an in situ chemical vapor phase polymerization (VPP) process. Experiment results showed that PEDOT and PEDOT nanocomposites were uniformly constructed in oxidant and oxidant nanocomposite films through a modifying template effect. The VPP PEDOT and its nanocomposites were built on aluminium film as super-capaitor electrode materials and electrochemical capacitive properties were investigated by using cycle voltammetry and charge/discharge techniques. The VPP PEDOT exhibited a specific capacitance of 92 F/g at a current density of 0.2 A/g. The VPP PEDOT composites consisting of CNTs and RGO displayed specific capacitances of 137 and 156 F/g, respectively, at the same current density. For VPP nanocomposites, more than 80 % of initial capacitance was retained after 1,000 charge/discharge cycles, suggesting a good cycling stability for electrochemical electrode materials. The good capacitive performance of the conducting polymer nanocomposites are contributed to the synergic effect of the two components.
机译:在这项工作中,通过原位化学气相聚合(VPP)工艺制备了导电聚合物聚(3,4-乙撑二氧噻吩)(PEDOT),PEDOT /碳纳米管(CNT)和PEDOT /还原氧化石墨烯(RGO)。实验结果表明,通过修饰模板效应,可以在氧化剂和氧化剂纳米复合材料薄膜中均匀地构建PEDOT和PEDOT纳米复合材料。 VPP PEDOT及其纳米复合材料以铝膜为超级电容器电极材料构建,并通过循环伏安法和充电/放电技术研究了电化学电容性能。 VPP PEDOT在0.2 A / g的电流密度下显示出92 F / g的比电容。由CNT和RGO组成的VPP PEDOT复合材料在相同电流密度下的比电容分别为137和156 F / g。对于VPP纳米复合材料,在1,000次充电/放电循环后,超过80%的初始电容得以保留,这表明电化学电极材料具有良好的循环稳定性。导电聚合物纳米复合材料的良好电容性能有助于这两种组分的协同作用。

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  • 来源
    《Journal of materials science》 |2013年第7期|2245-2253|共9页
  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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