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首页> 外文期刊>Journal of materials science >Dielectric and impedance characteristics of Ba(Bi_(0.5)Nb_(0.5))O_3 ceramics
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Dielectric and impedance characteristics of Ba(Bi_(0.5)Nb_(0.5))O_3 ceramics

机译:Ba(Bi_(0.5)Nb_(0.5))O_3陶瓷的介电和阻抗特性

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摘要

A lead free polycrystalline material Ba(Bi_(0.5)Nb_(0.5)) O_3 was prepared using a high-temperature mixed oxide technique using high purity ingredients. The formation of the material in monoclinic crystal structure was confirmed by an X-ray structural analysis at room temperature. The nature and texture of microstructure by scanning electron microscopy show that the compound has well defined grains uniformly distributed throughout the surface of the sample. Detailed studies of dielectric and impedance properties of the material, carried out in the frequency range of (1 kHz-1 MHz) at different temperatures (30 ℃ to 475 ℃), have shown many interesting properties. Dielectric study showed an existence of diffuse phase transition around 317 ℃. The temperature dependence of impedance parameters (impedance, modulus etc.) of the material exhibits a strong correlation of its micro-structure (i.e., bulk, grain boundary, etc.) with the electrical parameters. An existence of negative temperature coefficient of resistance (NTCR) type behavior in the material similar to that of semiconductors was also observed. The complex electric modulus analysis indicates the existence of hopping conduction mechanism in the system with non-exponential type of conductivity relaxation. The nature of variation of dc conductivity with temperature confirms the Arrhenius behavior of the material. The ac conductivity spectra show a typical signature of an ionic conducting system, and are found to obey Jonscher's universal power law. The temperature dependent pre-expo-nential factor (A) shows peak and frequency exponent (n) possesses a minimum at transition temperature.
机译:使用高温混合氧化物技术,使用高纯度成分制备无铅多晶材料Ba(Bi_(0.5)Nb_(0.5))O_3。通过在室温下的X射线结构分析确认了单斜晶体结构的材料的形成。通过扫描电子显微镜观察的微观结构的性质和质地表明,该化合物具有定义明确的晶粒,均匀地分布在整个样品表面。在不同温度(30℃至475℃)的频率范围(1 kHz-1 MHz)中进行的材料介电和阻抗特性的详细研究显示出许多有趣的特性。介电研究表明,在317℃附近存在扩散相变。材料的阻抗参数(阻抗,模量等)对温度的依赖性表现出其微观结构(即,体积,晶界等)与电参数的强烈相关性。还观察到在类似于半导体的材料中存在负电阻温度系数(NTCR)型行为。复数模量分析表明,具有非指数类型的电导率弛豫的系统中存在跳跃传导机制。直流电导率随温度变化的性质证实了材料的Arrhenius行为。交流电导率光谱显示了离子导电系统的典型特征,并且发现其遵循Jonscher的通用功率定律。温度相关的指数前因数(A)显示峰值和频率指数(n)在转变温度下具有最小值。

著录项

  • 来源
    《Journal of materials science 》 |2013年第6期| 2043-2051| 共9页
  • 作者单位

    Department of Physics, Hi-Tech College of Engineering,Bhubaneswar, India;

    Department of Physics, Govt. Autonomous College,Bhawanipatna, Odisha, India;

    Department of Physics, Institute of Technical Education and Research, S O A University, Bhubaneswar 751030, India;

    Department of Physics, Institute of Technical Education and Research, S O A University, Bhubaneswar 751030, India;

    Department of Physics, Institute of Technical Education and Research, S O A University, Bhubaneswar 751030, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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