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首页> 外文期刊>Journal of materials science >Microwave dielectric properties and low temperature firing of (1 - x)Li_2Zn_3Ti_4O_(12)-xLi_2TiO_3 (0.2≤x≤0.8) ceramics with B_2O_3-CuO addition
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Microwave dielectric properties and low temperature firing of (1 - x)Li_2Zn_3Ti_4O_(12)-xLi_2TiO_3 (0.2≤x≤0.8) ceramics with B_2O_3-CuO addition

机译:添加B_2O_3-CuO的(1-x)Li_2Zn_3Ti_4O_(12)-xLi_2TiO_3(0.2≤x≤0.8)陶瓷的微波介电性能和低温烧成

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摘要

In the present work, the (1 - x)Li_2Zn_3Ti_4O_(12)-xLi_2TiO_3 (0.2 ≤ x≤0.8) ceramics were prepared via the solid state reaction method. The 0.8Li_2Zn_3Ti_4O_(12)-0.2Li_2TiO_3 ceramic sample sintered at 1,160℃ for 2 h demonstrated high microwave dielectric property with a relative permittivity of 18.0, a high quality factor (Q×f)~100,000 GHz (at 7.2 GHz), and a temperature coefficient of resonant frequency about -47.8 ppm/℃. With 2.0 wt% 0.4B_2O_3-0.6CuO addition, a relative permittivity of 17.5, a Q f value of 71,000 GHz and a temperature coefficient of resonant frequency of -44.4 ppm/℃ Can be obtained in 0.8Li_2Zn_3Ti_4O_(12)-0.2Li_2TiO_3 ceramic sintered at 925℃ For 5 h and the chemical compatibility with silver electrode indicates that the ceramics may be a suitable candidate for the low temperature co-fired ceramic technology application.
机译:在本工作中,通过固态反应方法制备了(1-x)Li_2Zn_3Ti_4O_(12)-xLi_2TiO_3(0.2≤x≤0.8)陶瓷。在1,160℃下烧结2 h的0.8Li_2Zn_3Ti_4O_(12)-0.2Li_2TiO_3陶瓷样品表现出较高的微波介电性能,相对介电常数为18.0,品质因数(Q×f)〜100,000 GHz(在7.2 GHz),并且谐振频率的温度系数约为-47.8 ppm /℃。在0.8Li_2Zn_3Ti_4O_(12)-0.2Li_2TiO_3陶瓷中添加2.0 wt%的0.4B_2O_3-0.6CuO,相对介电常数为17.5,Q f值为71,000 GHz,谐振频率的温度系数为-44.4 ppm /℃。在925℃下烧结5 h,与银电极的化学相容性表明该陶瓷可能是低温共烧陶瓷技术应用的合适候选材料。

著录项

  • 来源
    《Journal of materials science》 |2013年第5期|1505-1510|共6页
  • 作者单位

    Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, China;

    Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, China;

    Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, China;

    Micro-optoelectronic Systems Laboratories, Xi'an Technological University, Xi'an 710032 Shaanxi, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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