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首页> 外文期刊>Journal of materials science >Low dielectric permittivity and high thermal stability composites based on crosslinkable poly (arylene ether nitrile) and hollow glass microsphere
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Low dielectric permittivity and high thermal stability composites based on crosslinkable poly (arylene ether nitrile) and hollow glass microsphere

机译:基于可交联聚(亚芳基醚腈)和中空玻璃微球的低介电常数和高热稳定性复合材料

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摘要

Crosslinkable poly (arylene ether nitrile)/hollow glass microsphere (PEN/HGM) composites with relative low dielectric permittivity and high thermal stability were prepared by a solution mixing and thermal compression method. For achieving this purpose, HGM were tight embedded in network, which were formed by crosslinking reaction of PEN end-capped with phthalonitrile. Compared to pure PEN, the dielectric constant of the resulting composite with 15 wt% of HGM reduced from 4.1 to 2.7 at 100 kHz, and the dielectric loss decreased from 2.0 × 10~(-2) to 0.8 × 10~(-2) at 100 kHz. Furthermore, the as-prepared composites showed significant enhancement in glass transition temperature (increased by 64 °C) and onset thermal degradation temperature (increased by 41 °C). Therefore, such composites were expected to find their applications area such as integrated circuit where needs low dielectric constant, low dielectric loss and high thermal stability.
机译:通过溶液混合和热压法制备了介电常数相对较低,热稳定性较高的可交联聚(亚芳基醚腈)/中空玻璃微球(PEN / HGM)复合材料。为了达到这个目的,HGM被紧密地嵌入网络中,这是通过封端有苯二甲腈的PEN的交联反应形成的。与纯PEN相比,具有15 wt%HGM的复合材料的介电常数在100 kHz下从4.1降低到2.7,介电损耗从2.0×10〜(-2)降低到0.8×10〜(-2)在100 kHz下此外,所制备的复合材料显示出玻璃化转变温度(升高了64℃)和起始热降解温度(升高了41℃)的显着提高。因此,期望这种复合材料找到其需要低介电常数,低介电损耗和高热稳定性的应用领域,例如集成电路。

著录项

  • 来源
    《Journal of materials science》 |2013年第4期|1238-1242|共5页
  • 作者单位

    Institute of Microelectronic and Solid State Electronic, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China ,High-Temperature Resistant Polymers and Composites Key Laboratory of Sichuan Province, Chengdu 610054, People's Republic of China;

    Institute of Microelectronic and Solid State Electronic, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China ,High-Temperature Resistant Polymers and Composites Key Laboratory of Sichuan Province, Chengdu 610054, People's Republic of China;

    Institute of Microelectronic and Solid State Electronic, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China ,High-Temperature Resistant Polymers and Composites Key Laboratory of Sichuan Province, Chengdu 610054, People's Republic of China;

    Institute of Microelectronic and Solid State Electronic, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China ,High-Temperature Resistant Polymers and Composites Key Laboratory of Sichuan Province, Chengdu 610054, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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