首页> 外文期刊>Journal of materials science >Microwave dielectric properties of temperature-stable (Mg_(0.95)Co_(0.05))_2TiO_4-Li_2TiO_3 composite ceramics for LTCC applications
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Microwave dielectric properties of temperature-stable (Mg_(0.95)Co_(0.05))_2TiO_4-Li_2TiO_3 composite ceramics for LTCC applications

机译:LTCC应用中温度稳定的(Mg_(0.95)Co_(0.05))_ 2TiO_4-Li_2TiO_3复合陶瓷的微波介电性能

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摘要

In this paper, the effects of Li_2O-B_2O_3-Bi_2O_3-SiO_2 (LBBS) glass on the phase formation, sintering characteristic, the microstructure and microwave dielectric properties of temperature-stable (Mg_(0.95)Co_(0.05))_2TiO_4-Li_2TiO_3 ceramics were investigated. (Mg_(0.95)Co_(0.05))_2TiO_4-Li_2TiO_3 powders were obtained by using the traditional solid-state process. A small amount of LBBS doping can effectively reduce sintering temperature and promote the densification of the ceramics. X-ray diffraction analysis revealed not only the primary phase (Mg·Co)_2TiO_4 associated with Li_2TiO_3 minor phase but also a third phase (Mg·Co)TiO_3. The dielectric constant and Qf values vary with the doping amount of LBBS and sintering temperatures. With the compensation of the positive temperature coefficient (τ_f) of Li_2TiO_3 and the negative τ_f of (Mg_(0.95)Co_(0.05))_2TiO_4, the τ_f of the specimens fluctuates around zero. The (Mg_(0.95)Co_(0.05))_2TiO_4 ceramic with 2.5 wt% LBBS addition and sintering at 900 °C for 4 h exhibited excellent microwave dielectric properties: ɛ_r = 19.076, Qf = 126100 GHz, and τ_f = 0.98 ppm/°C.
机译:本文研究了Li_2O-B_2O_3-Bi_2O_3-SiO_2(LBBS)玻璃对温度稳定的(Mg_(0.95)Co_(0.05))_ 2TiO_4-Li_2TiO_3陶瓷的相形成,烧结特性,微观结构和微波介电性能的影响。被调查了。采用传统的固态法制备了(Mg_(0.95)Co_(0.05))_ 2TiO_4-Li_2TiO_3粉末。少量的LBBS掺杂可以有效降低烧结温度并促进陶瓷的致密化。 X射线衍射分析表明,不仅与Li_2TiO_3次要相有关的主相(Mg·Co)_2TiO_4,而且还与第三相(Mg·Co)TiO_3有关。介电常数和Qf值随LBBS的掺杂量和烧结温度而变化。在Li_2TiO_3的正温度系数(τ_f)和(Mg_(0.95)Co_(0.05))_ 2TiO_4的负τ_f的补偿下,样品的τ_f在零附近波动。 (Mg_(0.95)Co_(0.05))_ 2TiO_4陶瓷,添加2.5wt%LBBS并在900°C的温度下烧结4小时,表现出优异的微波介电性能:ɛ_r= 19.076,Qf = 126100 GHz,τ_f= 0.98 ppm /° C。

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  • 来源
    《Journal of materials science》 |2017年第19期|14190-14194|共5页
  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China,Institute of Electronic and Information Engineering, University of Electronic Science and Technology of China, Dongguan, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China,Institute of Electronic and Information Engineering, University of Electronic Science and Technology of China, Dongguan, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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