Effects of silver nanowire concentration and annealing temperature on the optoelectronic properties of hybrid transparent electrodes

摘要

Abstract In this study, Ag nanowire (AgNW) was used to fabricate ITO/AgNW/ITO (IAI) and ZnO/AgNW/ZnO (ZAZ) hybrid transparent electrodes. The covered area ratio of AgNW showed that when AgNW concentration ~nAgNW > 2.0 mg/mL, AgNW easily agglomerated during the spin-coating. Meanwhile, Haacke index and haziness measurements also indicated that for application with high optical demands, the AgNW concentration should be <2.0 mg/mL for both ZnO or ITO systems. In this study, when ~nAgNw = 2.0 mg/mL, the sheet resistant of ZAZ electrodes was 10.5 Q/sq while the transmittance (including glass) was 72.7% in the visible region. For IAI electrodes, the sheet resistant was 18.8 Q/sq and transmittance (including glass) was 78.2% in the visible region. Further analysis implied that the sheet resistance of hybrid electrodes could be as low as 10 Q/sq by optimizing AgNW distribution as well as using suitable annealing techniques.