Gallium and indium co-doped ZnO as a transparent conducting oxide for Cu_2SnS_3 photodetectors

摘要

AbstractGa and In co-doped ZnO (GIZO) thin films were grown by pulsed laser deposition for use as a transparent conducting oxide (TCO) in Cu2SnS3(CTS) based photodetectors. The structural and optical properties were studied. The GIZO thin films were found exhibiting low resistivity of less than 10−3 Ω cm, and a high transparency of 97% both in visible and IR region. The performances of CTS photodetector with GIZO and with ZnO buffer assisted GIZO (ZnO/GIZO) as TCO layers were compared. The CTS photodetector with ZnO/GIZO as TCO was found to be exhibiting a higher photoresponse with responsivity, external quantum efficiency and specific detectivity of 552.3 A W−1, 1247.3% and 3.9 × 1012Jones respectively. ZnO/GIZO could serve as an effective replacement for the commonly used TCO, indium tin oxide, which is expensive and non-earth abundant.