Transparent write-once-read-many-times memory devices based on an ITO/EVA:rGO/ITO structure

摘要

Fully transparent electronic devices play an important role in electronic applications. Well-known examples are the wearable devices and transparent displays; their applications are transparent memory devices of interest. The transparent write-once-read-many-times (WORM) memory devices based on synthesized graphene oxide (GO) blended in poly (ethylene-co-vinyl acetate) (EVA) had been fabricated by a thermal roll lamination technique in which the synthesized GO inside the EVA matrix was reduced into reduced graphene oxide (rGO) during the lamination process. The memory devices exhibited an optical transmittance of more than 60% in the visible light region. The conduction mechanisms of the memory devices were identified using theoretical models based on the current-voltage (I-V) curves. The fitted I-V results were described by the conductive filaments in which electrons were transported through the rGO direct contacts. In addition, the maximum ON/OFF current ratio of the transparent WORM memory device was approximately 5 x 10(5), and the retention time tests showed two current states with good data retention properties under different temperatures.