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Highly UV sensitive Sn nanoparticles blended with polyaniline onto micro-interdigitated electrode array for UV-C detection applications

机译:高度紫外线敏感的锡纳米颗粒与聚苯胺共混到微交叉电极阵列上,用于紫外线-C检测应用

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摘要

Highly UV sensitive sub-5nm Sn nanoparticles-Polyaniline (Sn (NPs)-PANI) composite material has been formulated by chemical polymerisation. A thin film of the composite is deposited on Micro-Interdigitated Electrode (mu-IDEs) array for photodetector application. Considerably, higher optical density (10-12), w.r.t carbon of Sn (NPs) in Sn (NPs)-PANI/Al-IDE/Glass structures exhibit the exceedingly enhanced sensitivity towards UV illumination. There is substantial largecontrast ratio of approximate to 2290at -1V, significantly large responsivity approximate to 3.05A/W, detectivity of 2.26E+13 Jones and reasonable rise/fall time of approximate to 0.7/1.7s observed for Sn (NPs)-PANI/Al-IDE/Glass devices. Surface morphology, phase analysis, and elemental composition of Sn-PANI systems have been investigated by X-ray diffraction and Energy Dispersive X-ray analysis (EDX), respectively. Transmission electron microscopy (TEM) analysis confirms the size of the Sn (NPs) and blend with Polyaniline. The significantly enhanced sensitivity of 228514.3 for 254nm establishes the clear potential of the fabricated structure for UV-C detector application.
机译:高度紫外敏感的5nm以下Sn纳米颗粒-聚苯胺(Sn(NPs)-PANI)复合材料已通过化学聚合法制备。复合材料的薄膜沉积在微交叉电极(mu-IDEs)阵列上,用于光电探测器应用。相当高的光密度(10-12),锡(NPs)-PANI / Al-IDE /玻璃结构中的锡(NPs)碳重量比表现出极大的对UV照射的敏感性。在Sn(NPs)-PANI上观察到在-1V时具有相当大的对比度,在-1V时约为2290,响应度非常大,约为3.05A / W,探测率为2.26E + 13 Jones,并且合理的上升/下降时间约为0.7 / 1.7s。 / Al-IDE /玻璃设备。通过X射线衍射和能量色散X射线分析(EDX)分别研究了Sn-PANI系统的表面形态,相分析和元素组成。透射电子显微镜(TEM)分析确定了Sn(NPs)的大小,并与聚苯胺共混。 228514.3对254nm的显着增强的灵敏度为UV-C检测器应用奠定了制造结构的明显潜力。

著录项

  • 来源
    《Journal of materials science》 |2019年第8期|7534-7542|共9页
  • 作者单位

    Indian Inst Technol IIT Mandi, SCEE, Mandi 175005, Himachal Prades, India;

    Indian Inst Technol IIT Mandi, SCEE, Mandi 175005, Himachal Prades, India;

    Natl Inst Technol Silchar, Dept Elect & Commun Engn, Silchar 788010, Assam, India;

    Indian Inst Technol IIT Mandi, SCEE, Mandi 175005, Himachal Prades, India;

    Indian Inst Technol IIT Mandi, SCEE, Mandi 175005, Himachal Prades, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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