The creep behavior of single-crystal Zn-doped CdTe was examined in the small strain regime. Specimens from two different sources, with tensile axes [110] and [ll2], were deformed at l073 and 1173 K. Strain rates were of order 10~6 to l0~-1 s~-1. A laser interferometer was constructed to measure the small sample displacement. Cadmium overpressure was used to inhibit sublimation of test specimens at elevated temperatures. Some tests showed a transition from secondary to tertiary creep at low levels of strain. An activation energy for steady-state creep was calculated as Q_c = l.46 eV, and the creep exponent was found to be approximately n = 4.2. These results, coupled with reported activation energies for self diffusion of Cd in Cd(Zn)Te, indicate a dislocation creep mechanism. Etch pit density was measured before and after deformation and approached a common level regardless of initial etch pit density.
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