...
首页> 外文期刊>Journal of Materials Research >New epitaxy paradigm in epitaxial self-assembled oxide vertically aligned nanocomposite thin films
【24h】

New epitaxy paradigm in epitaxial self-assembled oxide vertically aligned nanocomposite thin films

机译:外延自组装氧化物垂直排列纳米复合薄膜中的新外延范例

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

Self-assembled oxide-based vertically aligned nanocomposite (VAN) thin films have aroused tremendous research interest in the past decade. The interest arises from the range of unique nanostructured films which can form and the multifunctionality arising from these forms. Hence, a large number of oxide VAN systems have been demonstrated and explored for enhancing specific physical properties, such as strain-enhanced ferroelectricity, tunable magnetotransport, and novel electrical/ionic transport properties. The epitaxial growth of the nanocomposite thin films and the coupling at the heterogeneous interfaces are critical considerations for future device applications. In this review, the advantages of strain coupling along vertical interfaces and film-substrate interfaces in nanocomposite films over conventional single phase films are discussed. Specifically, a unique strain compensation model enabling the epitaxial growth of two-phase nanocomposites having large lattice mismatch with substrates is proposed. Out-of-plane strain coupling between the two phases is also discussed in terms of designing strain states for desired functionalities.
机译:自组装的基于氧化物的垂直排列纳米复合材料(VAN)薄膜在过去十年中引起了巨大的研究兴趣。引起人们兴趣的是可以形成的独特纳米结构薄膜的范围以及由这些形式产生的多功能性。因此,已经证明并探索了大量的氧化物VAN系统,以增强特定的物理性能,例如应变增强的铁电,可调的磁输运和新颖的电/离子输运性能。纳米复合薄膜的外延生长和异质界面处的耦合是未来器件应用的关键考虑因素。在这篇综述中,讨论了与传统的单相薄膜相比,纳米复合薄膜中沿垂直界面和薄膜-基板界面沿应变耦合的优势。具体而言,提出了一种独特的应变补偿模型,该模型能够使与基质具有较大晶格失配的两相纳米复合材料外延生长。还根据设计所需功能的应变状态讨论了两相之间的面外应变耦合。

著录项

  • 来源
    《Journal of Materials Research》 |2017年第21期|4054-4066|共13页
  • 作者单位

    School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, USA;

    Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 OFS, U.K.;

    School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, USA,School of Electrical and Computer Engineering, West Lafayette, Indiana 47907, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号