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首页> 外文期刊>Journal of Materials Research >Highly symmetric and delayed excitonic emission response and space charge-limited current transport in P-irradiated WSe2 and WS2 nanoflakes
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Highly symmetric and delayed excitonic emission response and space charge-limited current transport in P-irradiated WSe2 and WS2 nanoflakes

机译:高度对称和延迟的兴奋性排放响应和空间电荷限制电流运输在P辐照后的WSE2和WS2纳米薄片中

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摘要

We report on the highly symmetric excitonic emission, manifested Raman active modes, and electrical properties of WSe_2 and WS_2 nanoflakes subjected to energetic β-particles. Raman spectra have revealed numerous mixed modes and a declining trend of the E_(2g)~1-to-A_(1g) intensity ratio with radiation dose (0-4.8 kGy).The nanoscale WSe_2 exhibits a remarkable luminescence peak, located at ~ 675 nm and characterized by a combinatorial effect of both 2s and 2p excitons, whereas the nanoflakes of WS_2 offered a testimony to charged excitons (trions) in the range ~ 624-630 nm. Moreover, a moderate (from ~ 2.29 to ~ 2.88 ns) and a nearly sevenfold enhancement in the slow life-time decay parameters have been observed for the irradiated WSe_2 and WS_2nanoflakes, respectively. Furthermore, the rectifying nature of the I-V trends suggests formation of metal-semiconductor nanojunctions with transport characteristics described by parameters such as ideality factor (η) and barrier height (Φ_(b)), both of which gave a declining trend with increasing β-dose. As substantiated by transport characteristics and first principle calculations, a semi-metallic behavior of WSe_2 was also realized due to the introduction of excessive chalcogen defects at the highest radiation dose. The results would strengthen our insights prior to their deployment in next-generation nanodevices integrating nano-electronics and nano-photonics at large.
机译:我们报告了高度对称的激发发射,表现为拉曼有源模式和对高能β-颗粒的WS_2和WS_2纳米薄片的电性能。拉曼光谱揭示了许多混合模式和辐射剂量(0-4.8 kgy)的E_(2g)〜1-a_(1g)强度比的下降趋势。纳米尺度Wse_2表现出卓越的发光峰,位于〜 675nm,其特征在于2S和2P激子的组合效果,而WS_2的纳米蛋糕提供了在〜624-630nm范围内的带电激子(枝)的证词。此外,已经分别观察到辐照的WSE_2和WS_2NANOFLAKES的中等(从〜2.29至约2.88ns)和慢寿命衰减参数中的近七倍增强。此外,IV趋势的整流性质表明使用诸如理想因子(η)和屏障高度(φ_(b))的参数描述的传输特性的形成金属半导体纳米结的形成,这两者都产生了增加的趋势,增加β-剂量。由于运输特性和第一原理计算证实,由于在最高辐射剂量下引入过量的硫致缺陷,也实现了WSE_2的半金属行为。结果将在整合纳米电子和纳米光子的下一代纳米模型部署之前加强我们的见解。

著录项

  • 来源
    《Journal of Materials Research 》 |2021年第4期| 870-883| 共14页
  • 作者单位

    Nanoscience and Soft-Matter Laboratory Department of Physics Tezpur University Napaam Tezpar Assam 784028 India;

    Nanoscience and Soft-Matter Laboratory Department of Physics Tezpur University Napaam Tezpar Assam 784028 India;

    UGC-DAE Consortium for Scientific Research Kolkata Centre LB block Sector-Ⅲ Bidhan Nagar West Bengal 700098 India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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