Comparison between numerical simulations and experiments for single-point diamond turning of single-crystal silicon carbide

摘要

Single-point diamond turning (SPDT) experiments conducted on single-crystal 6-H silicon carbide (SiC) have shown chip formation similar to that seen in the machining of metals. The ductile nature of SiC is believed to be the result of a high-pressure phase transformation (HPPT), which generates a plastic zone of material that behaves in a metallic manner. This metallic behavior is the basis for using AdvantEdge, a metal machining simulation software, for comparison to experimental results.rnSimulations (2D) were carried out by matching the SPDT experimental conditions, which were conducted at nanometer (nm) depths of cut and varying tool rake angles. The experiments were performed by machining the circumference of the single-crystal wafer, thereby conforming to a 2D orthogonal cut (plunge cuts, or an infeed, achieved the depth of cut, and no cross feed was incorporated).rnThe cutting and thrust forces generated from the experiments under ductile cutting conditions compared favorably with the simulation. As the depth of cut is decreased (250 nm, 100 nm, and 50 nm), the experimental conditions transition from a brittle to ductile behavior, with the 50 nm cuts being dominated by the ductile regime. Thus, the forces from the experiment and the simulations are in much better agreement for the smaller depths of cut, that is, below the critical depth of cut that establishes the ductile-to-brittle transition, as ductile conditions exist in both the simulation and experiments. The differences in the results that do arise are assumed to be primarily due to a springback of the material leading to increased rubbing on the flank face.