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首页> 外文期刊>Journal of magnetism and magnetic materials >Strong antiferromagnetic interlayer exchange coupling in [Co/Pt]_6/Ru/[Co/Pt]_4 structures with perpendicular magnetic anisotropy
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Strong antiferromagnetic interlayer exchange coupling in [Co/Pt]_6/Ru/[Co/Pt]_4 structures with perpendicular magnetic anisotropy

机译:具有垂直磁各向异性的[Co / Pt] _6 / Ru / [Co / Pt] _4结构中的强反铁磁层间交换耦合

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摘要

The interlayer exchange coupling properties of perpendicular synthetic antiferromagnetic (p-SAF) structure were investigated in this work by varying the Ru spacer thickness (t(Ru)). We observed an oscillatory decay of interlayer exchange coupling field (H-ex) and coupling strength (J(ex)) with a period of about 0.6 nm. The greatest values of H-ex and J(ex) are 13.2 kOe and 1.77 erg/cm(2) at the 1st peak, respectively. The H-ex decreases significantly to about 6.2 kOe with the increase of t(Ru) from 0.44 nm at the 1st peak to 1.03 nm at the 2nd peak. The effect of post-annealing temperature on the H ex was also investigated. The H ex decreases with the increase of annealing temperature. Furthermore, after annealing at 380 degrees C, the J(ex) value remains as high as 0.94 erg/cm(2) at the 1st peak. Our results represent a candidate for spin-transfer torque magnetic random-access memory (STT-MRAM).
机译:通过改变Ru间隔物的厚度(t(Ru)),研究了垂直合成反铁磁(p-SAF)结构的层间交换耦合特性。我们观察到层间交换耦合场(H-ex)和耦合强度(J(ex))的振荡衰减约为0.6 nm。 H-ex和J(ex)的最大值在第一个峰分别为13.2 kOe和1.77 erg / cm(2)。随着t(Ru)从第一个峰的0.44 nm增加到第二个峰的1.03 nm,H-ex显着降低至约6.2 kOe。还研究了后退火温度对H ex的影响。 H ex随着退火温度的升高而降低。此外,在380℃下退火后,J(ex)值在第一峰处保持高达0.94erg / cm(2)。我们的结果代表了自旋转移力矩磁性随机存取存储器(STT-MRAM)的候选者。

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