首页> 外文期刊>Journal of magnetism and magnetic materials >Effect of low-frequency AC magnetic susceptibility of Ru/Co_(60)Fe_(20)V_(20) and Ta/Co_(60)Fe_(20)V_(20) films
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Effect of low-frequency AC magnetic susceptibility of Ru/Co_(60)Fe_(20)V_(20) and Ta/Co_(60)Fe_(20)V_(20) films

机译:Ru / Co_(60)Fe_(20)V_(20)和Ta / Co_(60)Fe_(20)V_(20)薄膜的低频交流磁化率的影响

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In this study, the maximum alternating current (AC) magnetic susceptibility (chi(ac)) and optimal resonance frequency (f(res)) of (a) glass/Ru (X nm)/Co60Fe20V20(5 nm) and (b) glass/Ta(Y nm)/Co60Fe20V20(5 nm) films at room temperature (RT) were investigated through low-frequency AC magnetic susceptibility (chi(ac)) measurement, where X and Y each ranged from 5 to 10 nm. The variation of the highest. ac at the optimal resonance frequency (f(res)), at which the spin sensitivity is maximal, was examined using an experiment. The results indicated that. ac decreased as the frequency was increased. The maximum. ac of glass/Ru(9 nm)/Co60Fe20V20(5 nm) and glass/Ta (8 nm)/Co60Fe20V20(5 nm) was 20.6x10(-3) and 15.5x10(-3) at fres 100 Hz and 1000 Hz, respectively. The maximum. ac of glass/Ru(9 nm)/Co60Fe20V20(5 nm) was 1.3 times larger than that of glass/Ta(8 nm)/ Co60Fe20V20(5 nm). This indicated that the effect of the Ru seed layer is apparently suitable for low-frequency magnetic recording applications.
机译:在这项研究中,(a)玻璃/ Ru(X nm)/ Co60Fe20V20(5 nm)和(b)的最大交流电(AC)磁化率(chi(ac))和最佳共振频率(f(res))通过低频AC磁化率(chi(ac))测量研究了在室温(RT)下的玻璃/ Ta(Y nm)/ Co60Fe20V20(5 nm)薄膜,其中X和Y分别为5到10 nm。变异最高。使用实验检查了自旋灵敏度最大的最佳共振频率(f(res))上的ac。结果表明。交流随着频率的增加而降低。最大值。玻璃/ Ru(9 nm)/ Co60Fe20V20(5 nm)和玻璃/ Ta(8 nm)/ Co60Fe20V20(5 nm)的交流电在100 Hz和1000 Hz频率下分别为20.6x10(-3)和15.5x10(-3) , 分别。最大值。玻璃/ Ru(9nm)/ Co60Fe20V20(5nm)的ac是玻璃/ Ta(8nm)/ Co60Fe20V20(5nm)的ac的1.3倍。这表明Ru种子层的作用显然适用于低频磁记录应用。

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