Investigation of domain wall motion in RE-TM magnetic wire towards a current driven memory and logic

摘要

Current driven magnetic domain wall (DW) motions of ferri-magnetic TbFeCo wires have been investigated. In the case of a Si substrate, the critical current density (Jc) of DW motion was successfully reduced to 3 × 10~6 A/cm~2. Moreover, by using a polycarbonate (PC) substrate with a molding groove of 600 nm width, the Jc was decreased to 6 × 10~5 A/cm~2. In order to fabricate a logic in memory, a current driven spin logics (AND, OR, NOT) have been proposed and successfully demonstrated under the condition of low Jc. These results indicate that TbFeCo nanowire is an excellent candidate for next generation power saving memory and logic.