Silicon-on-insulator microcavity light emitting diodes with two Si/SiO_2 Bragg reflectors

摘要

Light emitting pn-diodes were fabricated on a 5.8 μm thick n-type Si device layer of a silicon-on-insulator (SOI) wafer using standard silicon technology and boron implantation. The thickness of the Si device layer was reduced to 1.3 μm, corresponding to a 4λ-cavity for λ = 1150 nm light. Electroluminescence spectra of these low Q-factor microcavities are presented. Addition of Si/SiO_2 Bragg reflectors on the top and bottom of the device (3.5 and 5.5 pairs, respectively) is predicted to lead to spectral emission enhancement by ～270.