首页> 外文期刊>Journal of Low Temperature Physics >Temperature and frequency dependence of complex conductance of ultrathin YBa_2Cu_3O_(7-x) films: Observation of vortex-antivortex pair unbinding
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Temperature and frequency dependence of complex conductance of ultrathin YBa_2Cu_3O_(7-x) films: Observation of vortex-antivortex pair unbinding

机译:超薄YBa_2Cu_3O_(7-x)薄膜复电导的温度和频率依赖性:涡旋-反涡旋对解离的观察

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We have studied the temperature dependencies of the complex sheet conductance, σ(ω, T), of 1–3 unit cell (UC) thick YBa_2Cu_3O_(7-x) films sandwiched between semiconducting Pr_0.6Y_0.4Ba_2Cu_3O_(7−x)layers at high frequencies. Experiments have been carried out in a frequency range between: 2–30 MHz with one-spiral coil technique, in 100 MHz-1 GHz frequency range with a new technique using a single spiral coil cavity, and at 30 GHz by aid of a resonant cavity technique. The real,ReM(T), and imaginary parts of the mutual-inductance M(T,ω), between a coil and a film, were measured and converted to complex conductivity by aid of the inversion procedure. We have found quadratic temperature dependence of the kinetic inductance, L_k(-1)(T), at low temperatures independent of frequency, with a break in slope at T~(dc)_(BKT) , the maximum of real part of conductance and large shift of the onset temperature and the maximum ωσ_1(T) position to higher temperatures with increasing frequency ω. We obtain from these data the universal ratio T~(dc)_(BKT) /L_k(-1)(T~(dc)_(BKT))=25, 25, and 17 nH K for 1, 2 and 3-UC films, respectively in close relation with theoretical prediction of 12 nH K for vortex-antivortex unbinding transition. The activated temperature dependence of the vortex diffusion constant was observed and discussed in the framework of vortex-antivortex pair pinning.
机译:我们研究了夹在半导体Pr_0.6Y_0.4Ba_2Cu_3O_(7-x)层之间的1-3个单元电池(UC)厚YBa_2Cu_3O_(7-x)薄膜的复层电导率σ(ω,T)的温度依赖性。在高频下。已经在以下频率范围内进行了实验:单螺旋线圈技术在2–30 MHz范围内,使用单螺旋线圈腔的新技术在100 MHz-1 GHz频率范围内以及借助共振在30 GHz频率范围内腔技术。测量了线圈和薄膜之间互感M(T,ω)的实部,ReM(T)和虚部,并借助反演程序将其转换为复电导率。我们已经发现,在不依赖于频率的低温下,动电感L_k(-1)(T)的二次温度依赖性,在T〜(dc)_(BKT)处出现斜率折断,即电导的实部最大值随着频率ω的增加,起始温度和最大ωσ_1(T)位置向较高温度的大偏移。我们从这些数据中获得通用比T〜(dc)_(BKT)/ L_k(-1)(T〜(dc)_(BKT))= 1、2和3的25、25和17 nH K UC膜分别与12 nH K的涡旋-反涡旋解离跃迁的理论预测密切相关。在涡旋-反涡旋对钉扎的框架内观察并讨论了涡旋扩散常数的激活温度依赖性。

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