首页> 外文期刊>Journal of Lightwave Technology >Two-dimensional photonic crystals in macroporous silicon: from mid-infrared (10 /spl mu/m) to telecommunication wavelengths (1.3-1.5 /spl mu/m)
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Two-dimensional photonic crystals in macroporous silicon: from mid-infrared (10 /spl mu/m) to telecommunication wavelengths (1.3-1.5 /spl mu/m)

机译:大孔硅中的二维光子晶体:从中红外(10 / spl mu / m)到电信波长(1.3-1.5 / spl mu / m)

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摘要

We present a detailed study of two-dimensional (2D) photonic crystals based on macroporous silicon technology, showing a broad range of wavelengths accessible for applications with this material. In this work, we have reached 1.55 /spl mu/m, this certainly represents a decisive issue for this technology. First, the reflection performances of a hexagonal and a triangular lattice of air holes are compared. The triangular lattice reduces technological requirements because the complete photonic bandgap (PBG) results from the overlap of broader forbidden bands of lower order. Second, a combined experimental and theoretical study is presented of the reflection properties of a 2D photonic crystal in a three-dimensional (3D) optical environment. This reveals the critical parameters that can degrade the performances of such 2-D structures. Reflection coefficients up to 98% are obtained with optical quality interfaces. Finally, a complete PBG centered at 1.55 /spl mu/m is demonstrated with a submicrometer period triangular lattice defined by holographic lithography. The influence of the air filling factor on the band position and the interface quality is analyzed by reflection measurements. The overall results show the high flexibility of the macroporous silicon technology and its applicability to integrated optics at telecommunication wavelengths.
机译:我们介绍了基于大孔硅技术的二维(2D)光子晶体的详细研究,显示了使用该材料可应用的各种波长。在这项工作中,我们达到了1.55 / spl mu / m,这无疑代表了这项技术的决定性问题。首先,比较气孔的六边形和三角形格子的反射性能。三角形晶格降低了技术要求,因为完整的光子带隙(PBG)来自较低阶禁带的重叠。第二,结合实验和理论研究,提出了二维(3D)光学环境中2D光子晶体的反射特性。这揭示了可能降低此类二维结构性能的关键参数。使用光学质量界面可获得高达98%的反射系数。最后,用全息光刻定义的亚微米周期三角形晶格展示了以1.55 / spl mu / m为中心的完整PBG。通过反射测量来分析空气填充因子对带位置和界面质量的影响。总体结果表明,大孔硅技术具有很高的灵活性,并且适用于电信波长的集成光学器件。

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