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机译:低暗电流和高响应性1020nm IngaAs / GaAs纳米脊波导光电探测器在300mm Si晶片上整体集成在一起
IMEC 3D & Silicon Photon Technol Dept Kapeldreef 75 B-3001 Leuven Belgium|Univ Ghent CIO & DVT INTEC Photon Res Grp Technologiepk Zwijnaarde 126 B-9052 Ghent Belgium;
IMEC 3D & Silicon Photon Technol Dept Kapeldreef 75 B-3001 Leuven Belgium;
IMEC 3D & Silicon Photon Technol Dept Kapeldreef 75 B-3001 Leuven Belgium;
IMEC 3D & Silicon Photon Technol Dept Kapeldreef 75 B-3001 Leuven Belgium|Katholieke Univ Leuven Micronano Syst B-3001 Leuven Belgium;
IMEC 3D & Silicon Photon Technol Dept Kapeldreef 75 B-3001 Leuven Belgium;
IMEC 3D & Silicon Photon Technol Dept Kapeldreef 75 B-3001 Leuven Belgium;
IMEC 3D & Silicon Photon Technol Dept Kapeldreef 75 B-3001 Leuven Belgium;
IMEC 3D & Silicon Photon Technol Dept Kapeldreef 75 B-3001 Leuven Belgium;
IMEC 3D & Silicon Photon Technol Dept Kapeldreef 75 B-3001 Leuven Belgium|Univ Ghent CIO & DVT INTEC Photon Res Grp Technologiepk Zwijnaarde 126 B-9052 Ghent Belgium;
Silicon; Optical waveguides; Plugs; Epitaxial growth; Dark current; Photodetectors; Photonics; III-V semiconductor materials; monolithic integration; nano-ridge engineering; optical simulation; photodetectors; quantum well devices; semiconductor waveguides; silicon photonics;
机译:在III-V CMOS光子平台上与InP光栅耦合器单片集成的低暗电流波导InGaAs金属-半导体-金属光电探测器
机译:单片集成的InGaAs / Algaas多量子阱光电探测器在300?mm Si晶圆上
机译:波导集成的黑磷光电探测器,具有高响应度和低暗电流
机译:0.3PA暗电流和0.65A / W响应值1020nm IngaAs / GaAs纳米脊波导光电探测器在300mm Si晶片上整体整体
机译:晶格失配材料的无力晶圆键合:极低暗电流光电探测器的制造。
机译:高响应度低暗电流刚性和柔性基板上的异质集成薄膜Si光电探测器
机译:波导集成黑磷光电探测器高 响应度和低暗电流
机译:使用单片InGaas-on-si LED和单片ptsi-si肖特基势垒探测器的穿晶片光通信