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Design and Analysis of New Structure for High-Performance Low-Index Defect-Based Photonic Lattice VCSEL

机译:高性能低折射率缺陷光子晶格VCSEL的新结构设计与分析

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Single-mode emission from vertical-cavity surface-emitting lasers (VCSELs) with low-index defects is studied numerically. For analyzing optical, thermal, and electrical characteristics of the structures, a comprehensive numerical model is adopted. The nonuniform loss distribution of high-index regions of 2-D square photonic lattice is investigated as a means to improve single-mode behavior of 2-D photonic lattice VCSEL (PhL-VCSEL) with low-index defect. A new structure for higher performance low-index defect-based PhL-VCSEL using a concave configuration of InGaP spacer layer is proposed. Simulation results demonstrates that using the new structure decreases threshold current and the width of the far-field pattern, weakens spatial hole burning effects and increases the modal loss of the competing modes with fundamental defect mode. Therefore, the high-power single-mode operation of the laser is enhanced. Using specific concave configuration considerably increases both threshold current of the first competing side mode and optical output power.
机译:数值研究了具有低折射率缺陷的垂直腔面发射激光器(VCSEL)的单模发射。为了分析结构的光学,热学和电学特性,采用了一个综合的数值模型。为了改善具有低折射率缺陷的二维光子晶格VCSEL(PhL-VCSEL)的单模性能,研究了二维正方形光子晶格的高折射率区域的非均匀损耗分布。提出了一种新的结构,该结构使用InGaP隔离层的凹形结构来实现基于高性能,低折射率缺陷的PhL-VCSEL。仿真结果表明,采用这种新结构可减小阈值电流和远场图形的宽度,削弱空间空穴燃烧的效果,并增加具有基本缺陷模式的竞争模式的模式损耗。因此,增强了激光器的高功率单模操作。使用特定的凹形配置会大大增加第一竞争侧模式的阈值电流和光输出功率。

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