A New Synapse For Non-Von Neumann Architectures Based On Switching A Correlated-Electron Random Access Memory (CeRAM) Cell

摘要

This paper has shown that CeRAM is a "born-on" type of resistive memory. The difference from ReRAMs is that the born-on behavior makes it suitable for memory and synaptic weights in Non-Von Neumman machines.CeRAM shows great promise because it does not depend on defects, traps or filaments. It is a quantum switch in the bulk of a TMO. Operation in a broad range of temperatures and high temperature retention has been demonstrated. Scaling has already started at the laboratory 100nm design rule level and 12-inch wafers. The device scales linearly with area.