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首页> 外文期刊>Journal of inorganic and organometallic polymers and materials >Synthesis and Photoluminescence of Silica Nanowires Grown on Si Substrate
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Synthesis and Photoluminescence of Silica Nanowires Grown on Si Substrate

机译:Si衬底上生长的二氧化硅纳米线的合成与光致发光

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摘要

A new simple method was developed to synthesize silica nanowires by physical thermal evaporation of a mixture of silica particles and iron trichloride. The silica nanowires have diameters from 30 to 50 nm, and lengths of ~ 10 nm, with iron particles at their tips. The growth mechanism of the amorphous silica nanowires follows vapor-liquid-solid model. A broad blue-green photoluminescence band with defined maximum peak energy of ~2.45 eV is observed at room temperature revealing that the silica nanowires could have potential applications in optoelectronic devices.
机译:通过物理热蒸发二氧化硅颗粒和三氯化铁的混合物,开发了一种新的简单方法来合成二氧化硅纳米线。二氧化硅纳米线的直径为30至50 nm,长度约为10 nm,尖端带有铁颗粒。非晶态二氧化硅纳米线的生长机理遵循气液固模型。在室温下观察到一个宽的蓝绿色光致发光带,定义的最大峰值能量为〜2.45 eV,这表明二氧​​化硅纳米线可能在光电器件中具有潜在的应用。

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    Department of Physics and Electronic Science, Weifang University, Weifang 261061, Shandong, People's Republic of China;

    Department of Physics and Electronic Science, Weifang University, Weifang 261061, Shandong, People's Republic of China;

    Department of Physics and Electronic Science, Weifang University, Weifang 261061, Shandong, People's Republic of China;

    Department of Physics and Electronic Science, Weifang University, Weifang 261061, Shandong, People's Republic of China;

    Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China;

    Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    silica; nanowires; photoluminescence;

    机译:二氧化硅纳米线;光致发光;

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