Modeling of Multilayer Suspended Microstrip Line and its Discontinuities on CMOS Grade Silicon Substrate for Millimeter Wave Integrated Circuit Applications

摘要

Transmission line parameters such as characteristic impedance Z0, effective dielectric constant εeff, attenuation constant α of suspended microstrip line on multilayer low resistively silicon substrate are investigated using full wave FEM simulator HFSS. Effect of variation in the thickness of Si3N4, polyimide and metal layers on attenuation are studied. Due to suspended nature, significant reduction in transmission loss is observed in the simulation at 60 GHz frequency. Discontinuities such as open end, gap and step in width of strip conductor are analyzed to extract their lumped equivalent circuits which can be used in the design of integrated circuits.