首页> 外文期刊>Journal of Heat Transfer >Thermal Resistance of Nanowire-Plane Interfaces
【24h】

Thermal Resistance of Nanowire-Plane Interfaces

机译:纳米线-平面界面的热阻

获取原文
获取原文并翻译 | 示例
       

摘要

This paper employs continuum principles combined with van der Waals theory to estimate the thermal contact resistance between nanowires and planar substrates. This resistance is modeled using elastic deformation theory and thermal resistance relations. The contact force between a nanowire and substrate is obtained through a calculation of the van der Waals interaction energy between the two. The model estimates numerical values of constriction and gap resistances for several nanowire-substrate combinations with water and air as the surrounding media. The total interface resistance is almost equal to the gap resistance when the surrounding medium has a high thermal conductivity. For a low-conductivity medium, the interface resistance is dominated by the constriction resistance, which itself depends significantly on nanowire and substrate conductivities. A trend observed in all calculations is that the interface resistance increases with smaller nanowires, showing that interface resistance will be a significant parameter in the design and performance of nanoelectronic devices.
机译:本文采用连续性原理结合范德华理论来估计纳米线和平面基板之间的热接触电阻。使用弹性变形理论和热阻关系对该电阻建模。纳米线与基板之间的接触力是通过计算两者之间的范德华相互作用能而获得的。该模型估算了几种以水和空气为周围介质的纳米线-基材组合的收缩和抗裂性数值。当周围介质具有高导热率时,总界面电阻几乎等于间隙电阻。对于低电导率的介质,界面电阻主要由压缩电阻决定,而压缩电阻本身主要取决于纳米线和基板的电导率。在所有计算中观察到的趋势是,随着纳米线的减小,界面电阻会增加,这表明界面电阻将成为纳米电子器件设计和性能的重要参数。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号