机译:理论上调整提高薄热电层品质因数的必要条件
Laboratory of Physical Alloys (LPA), College of Science, University of Dammam, Dammam 31113, Saudi Arabia,Laboratoire Photovoltaieque, Centre de Recherches et des Technologies de I'Energie Technopole Borj Cedria, Hammam Lif 2050, Tunisia;
Laboratory of Physical Alloys (LPA), College of Science, University of Dammam, Dammam 31113, Saudi Arabia;
Laboratory of Physical Alloys (LPA), College of Science, University of Dammam, Dammam 31113, Saudi Arabia;
Laboratory of Physical Alloys (LPA), College of Science, University of Dammam, Dammam 31113, Saudi Arabia;
Laboratoire PhotovoltaTque, Centre de Recherches et des Technologies de I'Energie Technopole Borj Cedria, Hammam Lif 2050, Tunisia;
thermoelectrical properties; figure of merit; Seebeck coefficient;
机译:提高热电材料的品质因数:一种新的理论方法
机译:菌株诱导在过渡金属二甲基化物单层Zrx_2中的热电数字(Zt〜2)的大增强了大量增强(X = S,SE,TE)
机译:P型BI0.5SB1.5TE3薄膜的平面内热电系数,具有温度依赖的薄膜,接近450 k
机译:Si-Ge多层薄膜的热电性能
机译:重掺杂钛 - 镍锡合金的热电图的实验与理论优化
机译:自下而上的途径来增强石墨烯纳米带的热电性能
机译:增强硼掺杂siGe薄膜的热电品质因数 通过纳米粒子边界
机译:关于热电图的理论极限的说明