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Solar Systems

机译:太阳能系统

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摘要

By forming a crack that runs parallel to the surface of a silicon (Si) wafer, researchers at Belgium's Inter-University MicroElectronics Center (IMEC) can produce crystalline Si wafers that are thinner than 50um. The wafers will be usable in solar cells. Using mechanical processes and existing screen printers and belt furnaces, scientists can create a crack that causes the wafer surface to peel away in thin layers (Fig. 1). The resulting Si foils offer 25sq.cm areas, are 30 to 50um thick, and potentially may exhibit no kerf loss. Engineers first screen-print a metallic layer on top of a thick crystalline Si wafer, then anneal the item at high temperatures in a belt furnace. Different thermal expansion coefficients for the metal and silicon generate a stress field in the substrate as the material cools. This eventually produces a crack that runs parallel to and near the surface. Ultimately, the top layer of silicon and the attached metal layer snap off from the parent substrate. A metal-etching solution removes the metal layer from the silicon foil. It then is possible to peel other layers from the same substrate.
机译:比利时大学间微电子中心(IMEC)的研究人员通过形成与硅(Si)晶片表面平行的裂纹,可以生产出厚度小于50um的晶体硅晶片。这些晶片将可用于太阳能电池。使用机械工艺以及现有的丝网印刷机和带式炉,科学家可以制造出一条裂缝,使晶片表面剥落成薄层(图1)。所得的硅箔面积为25sq.cm,厚度为30至50um,并且可能不会出现切缝损失。工程师首先在厚的晶体硅晶片上丝网印刷金属层,然后在带式炉中在高温下退火。当材料冷却时,金属和硅的不同热膨胀系数会在基板中产生应力场。最终会产生平行于表面并靠近表面的裂纹。最终,硅的顶层和附着的金属层从母基板上脱落下来。金属蚀刻溶液从硅箔上去除金属层。然后可以从同一基板上剥离其他层。

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