Carbon Dooinq and Etchina in Ga_x In_(1-x) As_y P_(1-y) on GaAs substrates Using CBr_4 by Metalorganic Chemical vapor Deposition

摘要

Carbon doping and etching by CBr_4 were studied for Ga_xIn_(1-x)As_yP_(1-y) (0≤y≤1) on GaAs grown by metalorganic chemical vapor deposition. It was found that the hole concentration drastically decreases with decreasing y when the flow rate of CBr_4 is constant. When y is under 0.5, the conduction type of GaInAsP changes to n-type. In the region of 0